component
FDS6681Z
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
fds6681z: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -26,6 +26,38 @@ FDS6681Z from onsemi, in a SO-8. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | -30 | | | V | | 2 |+| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 2 |+| Drain Current – Continuous | ID | -20 | | | A | Note 1a | 2 |+| Drain Current – Pulsed | ID | -105 | | | A | | 2 |+| Power Dissipation for Single Operation | PD | | | 2.5 | W | Note 1a | 2 |+| Power Dissipation for Single Operation | PD | | | 1.2 | W | Note 1b | 2 |+| Power Dissipation for Single Operation | PD | | | 1 | W | Note 1c | 2 |+| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |+| Drain–Source Breakdown Voltage | BVDSS | -30 | | | V | VGS = 0 V, ID = –250 µA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = –24 V, VGS = 0 V | 3 |+| Gate–Body Leakage | IGSS | -10 | | 10 | µA | VGS = ±25 V, VDS = 0 V | 3 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS = VGS, ID = –250 µA | 3 |+| Static Drain–Source On–Resistance | RDS(on) | | 3.8 | 4.6 | mΩ | VGS = –10 V, ID = –20 A | 3 |+| Static Drain–Source On–Resistance | RDS(on) | | 5.2 | 6.5 | mΩ | VGS = –4.5 V, ID = –17 A | 3 |+| Static Drain–Source On–Resistance | RDS(on) | | 5 | 6.3 | mΩ | VGS = –10 V, ID = –20 A, TJ=125°C | 3 |+| Turn–On Delay Time | td(on) | | 20 | 35 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Turn–On Rise Time | tr | | 9 | 18 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Turn–Off Delay Time | td(off) | | 660 | 1060 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Turn–Off Fall Time | tf | | 380 | 610 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Total Gate Charge at VGS = –10V | Qg(TOT) | | 185 | 260 | nC | VDS = –15 V, ID = –20 A | 3 |+| Total Gate Charge at VGS = –5V | Qg(TOT) | | 105 | 150 | nC | VDS = –15 V, ID = –20 A | 3 |+| Maximum Continuous Drain–Source Diode Forward Current | IS | -2.1 | | | A | | 4 |+| Drain–Source Diode Forward Voltage | VSD | | -0.7 | -1.2 | V | VGS = 0 V, IS = –2.1 A (Note 2) | 4 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 50 | °C/W | Note 1a (10 sec) | 2 |+| Thermal Resistance, Junction-to-Case | RθJC | | | 25 | °C/W | Note 1 | 2 |+ ## CAD (KiCad official) - Symbol: `FDS6681Z`
page.json+308−1@@ -180,6 +180,313 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9d8e68bffcc1155a",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "Note 1a",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Pulsed",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -105,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "Note 1a",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Note 1b",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Note 1c",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = –250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = –24 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±25 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.8,+ "max": -3,+ "conditions": "VDS = VGS, ID = –250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.8,+ "max": 4.6,+ "conditions": "VGS = –10 V, ID = –20 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5.2,+ "max": 6.5,+ "conditions": "VGS = –4.5 V, ID = –17 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5,+ "max": 6.3,+ "conditions": "VGS = –10 V, ID = –20 A, TJ=125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn–On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": 35,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn–On Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 18,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn–Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 660,+ "max": 1060,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn–Off Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 380,+ "max": 610,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge at VGS = –10V",+ "symbol": "Qg(TOT)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 185,+ "max": 260,+ "conditions": "VDS = –15 V, ID = –20 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge at VGS = –5V",+ "symbol": "Qg(TOT)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 105,+ "max": 150,+ "conditions": "VDS = –15 V, ID = –20 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain–Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": -2.1,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.7,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = –2.1 A (Note 2)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Note 1a (10 sec)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "Note 1",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +528,4 @@ "visibility": { "public": true }-}+}