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FDS6680AS-NL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS6680AS-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS6680AS-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, the reference terminal for VGS, which is rated ±20 V on page 1.
2 S passive Source of the N-channel MOSFET, the reference terminal for VGS, which is rated ±20 V on page 1.
3 S passive Source of the N-channel MOSFET, the reference terminal for VGS, which is rated ±20 V on page 1.
4 G input Gate of the N-channel MOSFET, rated VGS ±20 V with a gate resistance Rg of 0.36 to 3.6 Ω on page 2.
5 D passive Drain of the N-channel MOSFET, rated VDS 30 V with 45 A pulsed drain current on page 1.
6 D passive Drain of the N-channel MOSFET, rated VDS 30 V with 45 A pulsed drain current on page 1.
7 D passive Drain of the N-channel MOSFET, rated VDS 30 V with 45 A pulsed drain current on page 1.
8 D passive Drain of the N-channel MOSFET, rated VDS 30 V with 45 A pulsed drain current on page 1.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 13 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 9 A TA = 25 °C, notes b, c 1
Continuous Drain Current ID 7 A TA = 70 °C, notes b, c 1
Pulsed Drain Current IDM 45 A 1
Avalanche Energy EAS 21 mJ 1
Maximum Power Dissipation PD 2.2 W TA = 25 °C, notes b, c 1
Maximum Power Dissipation PD 1.3 W TA = 70 °C, notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 39 55 °C/W t ≤ 10 s, notes b, d 1
Maximum Junction-to-Foot (Drain) RthJF 25 29 °C/W Steady state 1
Maximum Junction-to-Ambient steady state (note d) RthJA 85 °C/W Steady state conditions, note d 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.008 Ω VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = 4.5 V, ID = 9 A 2
Gate Resistance Rg 0.36 1.8 3.6 Ω f = 1 MHz 2
Total Gate Charge Qg 15 23 nC VDS = 15 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 6.8 10.2 nC VDS = 15 V, VGS = 5 V, ID = 10 A 2
Continuous Source-Drain Diode Current IS 10 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A Pulse test, note a 2
Body Diode Voltage VSD 0.8 1.2 V IS = 9 A 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 16 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 12 16 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 16 22 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 10 18 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 8 16 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 10 20 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 16 22 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 8 15 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Reverse Recovery Time trr 15 30 ns IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 6 12 nC 2
Output Capacitance Coss 165 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 73 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 2.5 nC 2
Gate-Drain Charge Qgd 2.3 nC 2
Forward Transconductance gfs 50 S VDS = 15 V, ID = 10 A 2
VDS Temperature Coefficient ΔVDS/TJ 6 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -6 mV/°C 2
Body Diode Reverse Recovery Fall Time ta 8 ns 2
Body Diode Reverse Recovery Rise Time tb 7 ns 2

CAD (KiCad official)

  • Symbol: FDS6680AS-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds6680as-nl-vb-etched.step / fds6680as-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6680as-nl-vb.step / fds6680as-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 1fb4639881abcc7b, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF