component
FDS6680AS-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDS6680AS-HXY
HXY MOSFET · MOSFETs · SOP-8
FDS6680AS-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, shown as one of three source pins (S, S, S) on the SOP-8 drawing. |
| 2 | S | passive | Source of the N-channel MOSFET, shown as one of three source pins (S, S, S) on the SOP-8 drawing. |
| 3 | S | passive | Source of the N-channel MOSFET, shown as one of three source pins (S, S, S) on the SOP-8 drawing. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20V and a threshold of 1.2V min to 2.5V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
| 6 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
| 7 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
| 8 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 15 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 8 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 12 | mJ | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 15 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | t≤10s | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 25 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 10 | mΩ | VGS=10V, ID=7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 15 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.4 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.04 | 2.1 | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | |
| Gate-Source Charge | Qgs | 2.2 | 3.1 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | |
| Gate-Drain Charge | Qgd | 2 | 2.8 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | |
| Turn-On Delay Time | Td(on) | 1.2 | 2.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Rise Time | Tr | 40 | 72 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Turn-Off Delay Time | Td(off) | 18 | 36 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Fall Time | Tf | 7.2 | 14.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | |
| Input Capacitance | Ciss | 983 | 1616 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 147 | 207.8 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 109 | 162.6 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 7 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 35 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
FDS6680AS-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fds6680as-hxy-etched.step/fds6680as-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6680as-hxy.step/fds6680as-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
ba1b9d861eb93133, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDS6680AS-HXY
**HXY MOSFET** · MOSFETs · SOP-8
FDS6680AS-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, shown as one of three source pins (S, S, S) on the SOP-8 drawing. |
| 2 | S | passive | Source of the N-channel MOSFET, shown as one of three source pins (S, S, S) on the SOP-8 drawing. |
| 3 | S | passive | Source of the N-channel MOSFET, shown as one of three source pins (S, S, S) on the SOP-8 drawing. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20V and a threshold of 1.2V min to 2.5V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
| 6 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
| 7 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
| 8 | D | passive | Drain of the N-channel MOSFET, shown as one of four drain pins (D, D, D, D) on the SOP-8 drawing, with VDS of 30V max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | 15 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | 8 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 12 | mJ | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 15 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 85 | ℃/W | t≤10s | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 25 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8 | 10 | mΩ | VGS=10V, ID=7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 12 | 15 | mΩ | VGS=4.5V, ID=4A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.4 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 1.04 | 2.1 | | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg | | 6 | 8.4 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 |
| Gate-Source Charge | Qgs | | 2.2 | 3.1 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 |
| Gate-Drain Charge | Qgd | | 2 | 2.8 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 |
| Turn-On Delay Time | Td(on) | | 1.2 | 2.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 |
| Rise Time | Tr | | 40 | 72 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 |
| Turn-Off Delay Time | Td(off) | | 18 | 36 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 |
| Fall Time | Tf | | 7.2 | 14.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 |
| Input Capacitance | Ciss | | 983 | 1616 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 147 | 207.8 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 109 | 162.6 | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 7 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 35 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `FDS6680AS-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `fds6680as-hxy-etched.step` / `fds6680as-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds6680as-hxy.step` / `fds6680as-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758120789394898944) (6 pp, sha256 `ba1b9d861eb93133`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fds6680as-hxy-datasheet.pdf)