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FDS6679AZ

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS6679AZ

UMW · MOSFETs · SOP-8

FDS6679AZ from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the -30V P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE, and the gate-source rating is ±25 V (VGSS).
2 S passive Source terminal of the -30V P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE, and the gate-source rating is ±25 V (VGSS).
3 S passive Source terminal of the -30V P-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE, and the gate-source rating is ±25 V (VGSS).
4 G input Gate terminal of the MOSFET; the gate-source voltage is rated at ±25 V (VGSS).
5 D passive Drain terminal of the MOSFET; the datasheet rates drain-source voltage at -30 V (VDSS) and continuous drain current at -13 A.
6 D passive Drain terminal of the MOSFET; the datasheet rates drain-source voltage at -30 V (VDSS) and continuous drain current at -13 A.
7 D passive Drain terminal of the MOSFET; the datasheet rates drain-source voltage at -30 V (VDSS) and continuous drain current at -13 A.
8 D passive Drain terminal of the MOSFET; the datasheet rates drain-source voltage at -30 V (VDSS) and continuous drain current at -13 A.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -30 V VGS=0V, ID=-250μA 3
Gate-Source Threshold Voltage VGS(th) -1 -1.4 -2.5 V VDS=VGS, ID=-250μA 3
Gate-Source Leakage IGSS -100 100 nA VDS=0V, VGS=±25V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 3
On-State Drain Current ID(ON) -30 A VDS≥-10V, VGS=-10V 3
Drain-Source On-State Resistance RDS(ON) 11 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance RDS(ON) 15 mΩ VGS=-4.5V, ID=-8A 3
Body Diode Voltage VSD -0.75 -1.2 V IS=-3A, VGS=0V 4
Drain-Source Voltage VDSS -30 V TA=25°C unless otherwise noted 1
Gate-Source Voltage VGSS -25 25 V TA=25°C unless otherwise noted 1
Drain Current - Continuous ID -13 A Note 1a; TA=25°C unless otherwise noted 1
Drain Current - Pulsed ID -65 A Note 1a; TA=25°C unless otherwise noted 1
Operating and Storage Junction Temperature Range TJ,TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 50 °C/W Note 1a 2
Thermal Resistance, Junction-to-Case RθJC 25 °C/W Note 1 2

CAD (KiCad official)

  • Symbol: FDS6679AZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds6679az-etched.step / fds6679az-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6679az.step / fds6679az.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 425193a0f720b974, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF