component

FDS6679AZ-NL-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfds6679az-nl-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers fds6679az-nl-vb: viewers · Ray 7d ago
fds6679az-nl-vb-etched.glb Publish 0.1.0 · Ray 7d ago
fds6679az-nl-vb-etched.step fds6679az-nl-vb: factory component page (tier=lcsc) · Ray 7d ago
fds6679az-nl-vb-hero.glb fds6679az-nl-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
fds6679az-nl-vb-hero.overlay.json Publish 0.1.0 · Ray 7d ago
fds6679az-nl-vb.glb Publish 0.1.0 · Ray 7d ago
fds6679az-nl-vb.kicad_mod Publish 0.1.0 · Ray 7d ago
fds6679az-nl-vb.kicad_sym Publish 0.1.0 · Ray 7d ago
fds6679az-nl-vb.lbr Publish 0.1.0 · Ray 7d ago
fds6679az-nl-vb.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

FDS6679AZ-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS6679AZ-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V per the absolute maximum ratings.
2 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V per the absolute maximum ratings.
3 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V per the absolute maximum ratings.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
5 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -13.5 A at TC = 25 °C per the absolute maximum ratings.
6 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -13.5 A at TC = 25 °C per the absolute maximum ratings.
7 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -13.5 A at TC = 25 °C per the absolute maximum ratings.
8 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -13.5 A at TC = 25 °C per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -13.5 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -11.9 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -10.9 A TA = 25 °C 1
Continuous Drain Current ID -8.6 A TA = 70 °C 1
Pulsed Drain Current IDM -50 A 1
Continuous Source-Drain Diode Current IS -4.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.2 A TA = 25 °C 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 20 mJ 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 3.2 W TC = 70 °C 1
Maximum Power Dissipation PD 2.7 W TA = 25 °C 1
Maximum Power Dissipation PD 1.7 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.4 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±25 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = -10 V, ID = -10 A 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = -4.5 V, ID = -8 A 2
Gate Resistance Rg 0.5 2.2 4.4 Ω f = 1 MHz 2
Total Gate Charge Qg 57 86 nC VDS = -15 V, VGS = -10 V, ID = -10 A 2
Total Gate Charge Qg 29.5 45 nC VDS = -15 V, VGS = -4.5 V, ID = -10 A 2
Turn-On Delay Time td(on) 13 25 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 12 24 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 40 70 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 48 80 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 92 160 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 34 60 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 19 35 ns VDD = -15 V, RL = 1.5 Ω, ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω 2
Pulse Diode Forward Current ISM -60 A 2
Body Diode Voltage VSD -0.75 -1.2 V IS = -3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 27 45 ns IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 16 27 nC IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Maximum Junction-to-Ambient RthJA 38 46 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot RthJF 20 25 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: FDS6679AZ-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds6679az-nl-vb-etched.step / fds6679az-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6679az-nl-vb.step / fds6679az-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 2951edcaca2f3650, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF