# FDS6675BZ

**onsemi** · MOSFETs · SO-8

FDS6675BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally with pins 2 and 3; drain-to-source voltage is rated -30V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 3; continuous drain current is -11A (Note 1a). |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 2; the body diode is shown between drain and source. |
| 4 | G | input | Gate of the P-channel MOSFET, rated ±25V gate-to-source, with a gate-source diode that serves only as ESD protection (HBM 5.4 kV typical). |
| 5 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; max rDS(on) is 13 mΩ at VGS = -10V, ID = -11A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; pulsed drain current is -55A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; drain-to-source voltage is rated -30V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; the drain pins are the thermal reference for case temperature (Note 1). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID = -250 µA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -24V, VGS = 0V | 2 |
| Gate to Source Leakage Current | IGSS | -10 |  | 10 | µA | VGS = ±25V, VDS = 0V | 2 |
| Gate to Source Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VGS = VDS, ID = -250 µA | 2 |
| Drain to Source On Resistance | rDS(on) |  | 10.8 | 13 | mΩ | VGS = -10V, ID = -11A | 2 |
| Drain to Source On Resistance | rDS(on) |  | 17.4 | 21.8 | mΩ | VGS = -4.5V, ID = -9A | 2 |
| Drain to Source On Resistance | rDS(on) |  | 15 | 18.8 | mΩ | VGS = -10V, ID = -11A, TJ = 125°C | 2 |
| Input Capacitance | Ciss |  | 1855 | 2470 | pF | VDS = -15V, VGS = 0V, f = 1MHz | 2 |
| Output Capacitance | Coss |  | 335 | 450 | pF | VDS = -15V, VGS = 0V, f = 1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 330 | 500 | pF | VDS = -15V, VGS = 0V, f = 1MHz | 2 |
| Turn-On Delay Time | td(on) |  | 3 | 10 | ns | VDD = -15V, ID = -11A, VGS = -10V, RGS = 6Ω | 2 |
| Rise Time | tr |  | 7.8 | 16 | ns | VDD = -15V, ID = -11A, VGS = -10V, RGS = 6Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 120 | 200 | ns | VDD = -15V, ID = -11A, VGS = -10V, RGS = 6Ω | 2 |
| Fall Time | tf |  | 60 | 100 | ns | VDD = -15V, ID = -11A, VGS = -10V, RGS = 6Ω | 2 |
| Total Gate Charge | Qg |  | 44 | 62 | nC | VDS = -15V, VGS = -10V, ID = -11A | 2 |
| Total Gate Charge | Qg |  | 25 | 35 | nC | VDS = -15V, VGS = -5V, ID = -11A | 2 |
| Source to Drain Diode Forward Voltage | VSD |  | -0.7 | -1.2 | V | VGS = 0V, IS = -2.1A | 2 |
| Drain to Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate to Source Voltage | VGS | -25 |  | 25 | V |  | 1 |
| Drain Current - Continuous | ID | -11 |  |  | A | Note 1a | 1 |
| Drain Current - Pulsed | ID | -55 |  |  | A | Pulsed | 1 |
| Power Dissipation for Single Operation | PD |  |  | 2.5 | W | Note 1a | 1 |
| Power Dissipation for Single Operation | PD |  |  | 1.2 | W | Note 1b | 1 |
| Power Dissipation for Single Operation | PD |  |  | 1 | W | Note 1c | 1 |
| Operating and Storage Temperature | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 50 | °C/W | Note 1a: mounted on 1 in² pad of 2 oz copper | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 105 | °C/W | Note 1b: mounted on .04 in² pad of 2 oz copper | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 125 | °C/W | Note 1c: mounted on minimum pad | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 25 | °C/W | Note 1 | 1 |

## CAD (KiCad official)

- Symbol: `FDS6675BZ`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `fds6675bz-etched.step` / `fds6675bz-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds6675bz.step` / `fds6675bz.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588905417921466369) (6 pp, sha256 `b8c185db8e4063ed`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds6675bz-datasheet.pdf)