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FDS6673BZ-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS6673BZ-HXY
HXY MOSFET · MOSFETs · SOP-8
FDS6673BZ-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins shown on the SOP-8 diagram. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins shown on the SOP-8 diagram. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins shown on the SOP-8 diagram. |
| 4 | G | input | Gate of the P-channel MOSFET, with VGS rated ±20V and a threshold of -1.2V to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated VDS -30V, one of four drain pins. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated VDS -30V, one of four drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, rated VDS -30V, one of four drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, rated VDS -30V, one of four drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TA=25℃ | -15 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -11 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 151 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55A | 1 | ||
| Avalanche Current | IAS | -55 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 40 | ℃/W | t≦10s | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 8.7 | mΩ | VGS=-10V , ID=-12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 13.5 | mΩ | VGS=-4.5V , ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -2.5 | -1.2 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -14 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -56 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.018 | V/℃ | Reference to 25℃ , ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 5.04 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 25 | S | VDS=-5V , ID=-12A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 30 | nC | VDS=-15V , VGS=-4.5V , ID=-12A | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDS=-15V , VGS=-4.5V , ID=-12A | 2 | ||
| Gate-Drain Charge | Qgd | 10.4 | nC | VDS=-15V , VGS=-4.5V , ID=-12A | 2 | ||
| Turn-On Delay Time | Td(on) | 9.4 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A | 2 | ||
| Rise Time | Tr | 10.2 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A | 2 | ||
| Turn-Off Delay Time | Td(off) | 117 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A | 2 | ||
| Fall Time | Tf | 24 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A | 2 | ||
| Input Capacitance | Ciss | 3448 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 508 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 421 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 19.4 | nS | IF=-10A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 9.1 | nC | IF=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
FDS6673BZ-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fds6673bz-hxy-etched.step/fds6673bz-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6673bz-hxy.step/fds6673bz-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
41629980560a5361, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).