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FDS6570A-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS6570A-HXY

HXY MOSFET · MOSFETs · SOP-8

FDS6570A-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, one of three source pins tied together.
2 S passive Source of the N-channel MOSFET, one of three source pins tied together.
3 S passive Source of the N-channel MOSFET, one of three source pins tied together.
4 G input Gate of the N-channel MOSFET, rated for VGS of ±12 V maximum and driven with gate voltages as low as 4.5 V for RDS(ON) < 5.5 mΩ.
5 D passive Drain of the N-channel MOSFET, rated VDS = 20 V and ID = 20 A continuous, one of four drain pins tied together.
6 D passive Drain of the N-channel MOSFET, rated VDS = 20 V and ID = 20 A continuous, one of four drain pins tied together.
7 D passive Drain of the N-channel MOSFET, rated VDS = 20 V and ID = 20 A continuous, one of four drain pins tied together.
8 D passive Drain of the N-channel MOSFET, rated VDS = 20 V and ID = 20 A continuous, one of four drain pins tied together.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V TC=25℃ 1
Gate-Source Voltage VGS -12 12 V TC=25℃ 1
Drain Current Continuous ID 20 A TC=25℃ 1
Drain Current Continuous ID 16 A TC=70℃ 1
Drain Current Pulsed IDM 140 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 162 mJ TC=25℃ 1
Single Pulse Avalanche Current IAS 57 A TC=25℃ 1
Power Dissipation PD 3.1 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction to ambient RθJA 40 ℃/W 1
Drain-Source Breakdown Voltage VDSS 20 V ID=250 uA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=20V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 uA VDS=20V, VGS=0V, TJ=55℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.5 1.6 V VDS=VGS , ID=250uA 2
Static Drain-Source On-Resistance RDS(On) 5.5 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance RDS(On) 7 mΩ VGS=4.5V, ID=20A TJ=125℃ 2
On State Drain Current ID(ON) 140 A VGS=10V, VDS=5V 2
Forward Transconductance gFS 105 S VDS=5V, ID=20A 2
Input Capacitance Ciss 3080 4630 pF VGS=0V, VDS=10V, f=1MHz 2
Output Capacitance Coss 520 960 pF VGS=0V, VDS=10V, f=1MHz 2
Reverse Transfer Capacitance Crss 350 810 pF VGS=0V, VDS=10V, f=1MHz 2
Gate Resistance Rg 0.6 2.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 28 43 nC VGS=10V, VDS=10V, ID=20A 2
Gate Source Charge Qgs 7 11 nC VGS=10V, VDS=10V, ID=20A 2
Gate Drain Charge Qgd 7 17 nC VGS=10V, VDS=10V, ID=20A 2
Turn-On DelayTime td(on) 7 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Turn-On Rise Time tr 8 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Turn-Off DelayTime td(off) 70 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 18 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 13 20 ns IF= 20A, dI/dt= 500A/us 2
Body Diode Reverse Recovery Charge Qrr 29 43 nC IF= 20A, dI/dt= 500A/us 2
Maximum Body-Diode Continuous Current IS 4 A 2
Diode Forward Voltage VSD 1 V IS=1A,VGS=0V 2

CAD (KiCad official)

  • Symbol: FDS6570A-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds6570a-hxy-etched.step / fds6570a-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6570a-hxy.step / fds6570a-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 f6ad48ce91dc71d2, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF