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FDS6294A-NL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS6294A-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS6294A-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1 of 3 source pins); VDS rated 30 V and body diode continuous current up to 10 A.
2 S passive Source terminal of the N-channel MOSFET (pin 2 of 3 source pins), tied to the same source as pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET (pin 3 of 3 source pins), tied to the same source as pins 1 and 2.
4 G input Gate terminal of the N-channel MOSFET with gate-source voltage rated ±20 V and threshold VGS(th) of 1.0 V min to 3.0 V max.
5 D passive Drain terminal of the N-channel MOSFET (pin 5 of 4 drain pins), VDS 30 V maximum.
6 D passive Drain terminal of the N-channel MOSFET (pin 6 of 4 drain pins), tied to the same drain as pins 5, 7 and 8.
7 D passive Drain terminal of the N-channel MOSFET (pin 7 of 4 drain pins), tied to the same drain as pins 5, 6 and 8.
8 D passive Drain terminal of the N-channel MOSFET (pin 8 of 4 drain pins), tied to the same drain as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM 45 A TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 39 55 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 board 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 25 29 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
Forward Transconductance gfs 50 S VDS = 15 V, ID = 10 A 2
Gate Resistance Rg 0.36 1.8 3.6 Ω f = 1 MHz 2
Body Diode Voltage VSD 0.8 1.2 V IS = 9 A 2
Continuous Source-Drain Diode Current IS 10 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Reverse Recovery Time trr 15 30 ns IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 6 12 nC IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: FDS6294A-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds6294a-nl-vb-etched.step / fds6294a-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6294a-nl-vb.step / fds6294a-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 b35116465651e450, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF