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FDS4685-NL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS4685-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS4685-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated -5.3 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated -5.3 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated -5.3 A at TC = 25 °C.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -40 V and continuous drain current is -16.1 A at TC = 25 °C.
6 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -40 V and continuous drain current is -16.1 A at TC = 25 °C.
7 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -40 V and continuous drain current is -16.1 A at TC = 25 °C.
8 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -40 V and continuous drain current is -16.1 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -16.1 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -12.9 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current ID -10.2 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -8.2 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -50 A 1
Continuous Source-Drain Diode Current IS -5.3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.1 A TA = 25 °C (notes b, c) 1
Single Pulse Avalanche Current IAS -28 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 39 mJ 1
Maximum Power Dissipation PD 6.3 W TC = 25 °C 1
Maximum Power Dissipation PD 4 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 37 50 °C/W t 10 s (notes b, d) 1
Maximum Junction-to-Ambient steady state RthJA 85 °C/W steady state (note d) 1
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 20 °C/W steady state 1
Drain-Source Breakdown Voltage VDS -40 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.2 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -25 A VDS = -5 V, VGS = -10 V 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -8.2 A, VGS = 0 V 2
Total Gate Charge Qg 64 95 nC VDS = -20 V, VGS = -10 V, ID = -10.2 A 2
Total Gate Charge Qg 33 50 nC VDS = -20 V, VGS = -4.5 V, ID = -10.2 A 2
Gate Resistance Rg 0.4 2 4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 57 86 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 50 75 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 40 60 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 17 26 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 13 20 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 11 20 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 45 68 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -20 V, RL = 2.4 Ω, ID = -8.2 A, VGEN = -10 V, Rg = 1 Ω 2
Body Diode Reverse Recovery Time trr 36 54 ns IF = -8.2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 41 62 nC IF = -8.2 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Pulse Diode Forward Current ISM -50 A 2
Continuous Source-Drain Diode Current IS -5.3 A TC = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = -10 V, ID = -10.2 A 2
Drain-Source On-State Resistance RDS(on) 0.014 Ω VGS = -4.5 V, ID = -8.4 A 2
Forward Transconductance gfs 37 S VDS = -15 V, ID = -10.2 A 2
Input Capacitance Ciss 3007 pF VDS = -20 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 335 pF VDS = -20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 291 pF VDS = -20 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 9.8 nC 2
Gate-Drain Charge Qgd 15.7 nC 2
Reverse Recovery Fall Time ta 20 ns 2
Reverse Recovery Rise Time tb 16 ns 2
Temperature Coefficient of VDS ΔVDS/ΔTJ -36 mV/°C ID = -250 µA 2

CAD (KiCad official)

  • Symbol: FDS4685-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds4685-nl-vb-etched.step / fds4685-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4685-nl-vb.step / fds4685-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 8000944fc8e852b8, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF