component
FDS4675-NL-JSM
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JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDS4675-NL-JSM
JSMSEMI · MOSFETs · SOP-8
FDS4675-NL-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2 and 3 are tied together as source); the datasheet rates diode continuous forward current at -3 A for the device. |
| 2 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2 and 3 are tied together as source); the datasheet rates diode continuous forward current at -3 A for the device. |
| 3 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2 and 3 are tied together as source); the datasheet rates diode continuous forward current at -3 A for the device. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±25 V (VGSS). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, IDS=-250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | mA | VDS=-32V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | mA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.4 | -1.9 | -2.4 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 13 | 18 | mW | VGS=-10V, IDS=-11A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 16 | 22 | mW | VGS=-4.5V, IDS=-7A | 2 | |
| Drain-Source Voltage | VDSS | -40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | -11 | A | VGS=-10V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | -9 | A | VGS=-10V, TA=70°C | 1 | ||
| 300ms Pulsed Drain Current | IDM | -44 | A | VGS=-10V, 300ms pulse | 1 | ||
| Diode Continuous Forward Current | IS | -3 | A | 1 | |||
| Avalanche Current, Single pulse | IAS | -33 | A | L=0.1mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 54 | mJ | L=0.1mH | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | t ≤ 10s | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | Steady State | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 40 | °C/W | t ≤ 10s | 1 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 75 | °C/W | Steady State | 1 | ||
| Thermal Resistance-Junction to Lead | RθJL | 2 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
FDS4675-NL-JSM - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fds4675-nl-jsm-etched.step/fds4675-nl-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds4675-nl-jsm.step/fds4675-nl-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (7 pp, sha256
623254896eca1f35, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDS4675-NL-JSM
**JSMSEMI** · MOSFETs · SOP-8
FDS4675-NL-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2 and 3 are tied together as source); the datasheet rates diode continuous forward current at -3 A for the device. |
| 2 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2 and 3 are tied together as source); the datasheet rates diode continuous forward current at -3 A for the device. |
| 3 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2 and 3 are tied together as source); the datasheet rates diode continuous forward current at -3 A for the device. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±25 V (VGSS). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (pins 5 to 8 are tied together as drain); the drain-source voltage is rated at -40 V (VDSS) and continuous drain current at -11 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, IDS=-250mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | mA | VDS=-32V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 30 | mA | TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1.4 | -1.9 | -2.4 | V | VDS=VGS, IDS=-250mA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VGS=±25V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 13 | 18 | mW | VGS=-10V, IDS=-11A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 16 | 22 | mW | VGS=-4.5V, IDS=-7A | 2 |
| Drain-Source Voltage | VDSS | | | -40 | V | | 1 |
| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | | | -11 | A | VGS=-10V, TA=25°C | 1 |
| Continuous Drain Current | ID | | | -9 | A | VGS=-10V, TA=70°C | 1 |
| 300ms Pulsed Drain Current | IDM | | | -44 | A | VGS=-10V, 300ms pulse | 1 |
| Diode Continuous Forward Current | IS | | | -3 | A | | 1 |
| Avalanche Current, Single pulse | IAS | | | -33 | A | L=0.1mH | 1 |
| Avalanche Energy, Single pulse | EAS | | | 54 | mJ | L=0.1mH | 1 |
| Maximum Power Dissipation | PD | | | 3.1 | W | t ≤ 10s | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | Steady State | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 40 | °C/W | t ≤ 10s | 1 |
| Thermal Resistance-Junction to Ambient | RθJA | | | 75 | °C/W | Steady State | 1 |
| Thermal Resistance-Junction to Lead | RθJL | | | 2 | °C/W | Steady State | 1 |
## CAD (KiCad official)
- Symbol: `FDS4675-NL-JSM`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `fds4675-nl-jsm-etched.step` / `fds4675-nl-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds4675-nl-jsm.step` / `fds4675-nl-jsm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603075201915629568) (7 pp, sha256 `623254896eca1f35`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fds4675-nl-jsm-datasheet.pdf)