component
FDS4675
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS4675
onsemi · MOSFETs · SO-8
FDS4675 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; VDSS is -40 V and continuous drain current is -11 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; VDSS is -40 V and continuous drain current is -11 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; VDSS is -40 V and continuous drain current is -11 A. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V with threshold of -1 to -3 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; pulsed drain current is -50 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; pulsed drain current is -50 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8; pulsed drain current is -50 A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7; pulsed drain current is -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0 V, ID = -250 μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -32 V, VGS = 0 V | 3 | ||
| Gate-Body Leakage, Forward | IGSSF | 100 | nA | VGS = 20 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage, Reverse | IGSSR | -100 | nA | VGS = -20 V VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -3 | -1.4 | -1 | V | VDS = VGS, ID = -250 μA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 10 | 13 | mΩ | VGS = -10 V, ID = -11 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 13 | 17 | mΩ | VGS = -4.5 V, ID = -9.5 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 15 | 21 | mΩ | VGS=-10 V, ID =-11 A, TJ=125°C | 3 | |
| On-State Drain Current | ID(on) | -25 | A | VGS = -10 V, VDS = -5 V | 3 | ||
| Turn-On Delay Time | td(on) | 20 | 36 | ns | VDD = -20 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Turn-On Rise Time | tr | 29 | 46 | ns | VDD = -20 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 95 | 152 | ns | VDD = -20 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Turn-Off Fall Time | tf | 60 | 96 | ns | VDD = -20 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω | 3 | |
| Total Gate Charge | Qg | 40 | 56 | nC | VDS = -20 V, ID = -11 A, VGS = -4.5 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -2.1 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0 V, IS = -2.1 A (Note 2) | 3 | |
| Drain-Source Voltage | VDSS | -40 | V | TA=25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA=25°C | 2 | |
| Drain Current - Continuous | ID | -11 | A | Note 1a | 2 | ||
| Drain Current - Pulsed | ID | -50 | A | 2 | |||
| Power Dissipation for Single Operation | PD | 2.4 | W | Note 1a (steady state) | 2 | ||
| Power Dissipation for Single Operation | PD | 1.4 | W | Note 1b | 2 | ||
| Power Dissipation for Single Operation | PD | 1.2 | W | Note 1c | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | Note 1a (steady state); 50 (10 sec) | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | °C/W | Note 1c | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 25 | °C/W | Note 1 | 2 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | -34 | mV/°C | ID = -250 μA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | 4.6 | mV/°C | ID = -250 μA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 44 | S | VDS = -5 V, ID = -11 A | 3 | ||
| Input Capacitance | Ciss | 4350 | pF | VDS = -20 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Output Capacitance | Coss | 622 | pF | VDS = -20 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 290 | pF | VDS = -20 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDS = -20 V, ID = -11 A, VGS = -4.5 V | 3 | ||
| Gate-Drain Charge | Qgd | 13 | nC | VDS = -20 V, ID = -11 A, VGS = -4.5 V | 3 |
CAD (KiCad official)
- Symbol:
FDS4675 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds4675-etched.step/fds4675-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds4675.step/fds4675.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
3dadba7dba3c5078, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).