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FDS4450-NL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS4450-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS4450-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; continuous source-drain diode current is 4.2 A at TC = 25 °C.
2 S passive Source of the N-channel MOSFET, tied to the same source node as pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied to the same source node as pins 1 and 2.
4 G input Gate of the N-channel MOSFET; gate-source voltage limit is ±20 V with threshold of 1.2 V min to 2.5 V max at 250 µA.
5 D passive Drain of the N-channel MOSFET; VDS rated 60 V, ID 7.6 A at TC = 25 °C.
6 D passive Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 7; pulsed drain current is 25 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 7.6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 6.8 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 6.1 A TJ = 150 °C, TA = 25 °C (b, c) 1
Continuous Drain Current ID 4.8 A TJ = 150 °C, TA = 70 °C (b, c) 1
Pulsed Drain Current IDM 25 A 1
Continuous Source-Drain Diode Current IS 4.2 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C (b, c) 1
Avalanche Current IAS 15 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 11.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 3.2 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C (b, c) 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C (b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 38 50 °C/W t ≤ 10 s (b, d) 1
Maximum Junction-to-Foot (Drain) RthJF 20 25 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 25 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.025 Ω VGS = 10 V, ID = 4.6 A 2
Drain-Source On-State Resistance RDS(on) 0.035 Ω VGS = 4.5 V, ID = 4.2 A 2
Total Gate Charge Qg 21 32 nC VDS = 30 V, VGS = 10 V, ID = 4.6 A 2
Gate Resistance Rg 3.3 5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 20 30 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 150 225 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 60 90 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 10 15 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 25 40 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 4.2 A TC = 25 °C 2
Pulse Diode Forward Current ISM 25 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 2 A 2
Body Diode Reverse Recovery Time trr 25 50 ns IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 25 50 nC IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 55 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -6.3 mV/°C ID = 250 µA 2
Forward Transconductance gfs 20 S VDS = 15 V, ID = 4.6 A 2
Input Capacitance Ciss 1100 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 90 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 3.5 nC VDS = 30 V, VGS = 4.5 V, ID = 4.6 A 2
Gate-Drain Charge Qgd 4.2 nC VDS = 30 V, VGS = 4.5 V, ID = 4.6 A 2
Reverse Recovery Fall Time ta 19 ns IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 6 ns IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: FDS4450-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds4450-nl-vb-etched.step / fds4450-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4450-nl-vb.step / fds4450-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 e968c6f1cff291df, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF