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FDS4435A-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS4435A-HXY

HXY MOSFET · MOSFETs · SOP-8

FDS4435A-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied to the other source pins (pins 1-3); drain-source rating is -30V.
2 S passive Source of the P-channel MOSFET, tied to the other source pins (pins 1-3); drain-source rating is -30V.
3 S passive Source of the P-channel MOSFET, tied to the other source pins (pins 1-3); drain-source rating is -30V.
4 G input Gate of the P-channel MOSFET; gate-source voltage rating is ±20V and the threshold is -1.0V to -2.5V at ID=-250µA.
5 D passive Drain of the P-channel MOSFET, tied to the other drain pins (pins 5-8); continuous drain current is -11A and pulsed drain current is -40A.
6 D passive Drain of the P-channel MOSFET, tied to the other drain pins (pins 5-8); continuous drain current is -11A and pulsed drain current is -40A.
7 D passive Drain of the P-channel MOSFET, tied to the other drain pins (pins 5-8); continuous drain current is -11A and pulsed drain current is -40A.
8 D passive Drain of the P-channel MOSFET, tied to the other drain pins (pins 5-8); continuous drain current is -11A and pulsed drain current is -40A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID -11 A TA=25°C, VGS @ 10V 1
Pulsed Drain Current IDM -40 A 1
Total Power Dissipation PD 3.7 W TA=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 33.8 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 13 16 mΩ VGS= -10V, ID= -10A 2
Static Drain-Source on-Resistance RDS(on) 18 27 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -11 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -15A 2

CAD (KiCad official)

  • Symbol: FDS4435A-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds4435a-hxy-etched.step / fds4435a-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4435a-hxy.step / fds4435a-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 ef00873e2d8820fd, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF