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FDS4435A-ES

Public Made by Adom

by adom

ElecSuper MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS4435A-ES

ElecSuper · MOSFETs · SOP-8

FDS4435A-ES from ElecSuper, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 all as Source, with device BVDSS rated -30 V.
2 Source passive Source terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 all as Source, with device BVDSS rated -30 V.
3 Source passive Source terminal of the P-channel MOSFET; the datasheet lists pins 1, 2 and 3 all as Source, with device BVDSS rated -30 V.
4 Gate input Gate terminal of the P-channel MOSFET; gate-source voltage VGS is rated ±25 V.
5 Drain passive Drain terminal of the P-channel MOSFET; continuous drain current ID is rated -10.5 A at TA=25°C.
6 Drain passive Drain terminal of the P-channel MOSFET; continuous drain current ID is rated -10.5 A at TA=25°C.
7 Drain passive Drain terminal of the P-channel MOSFET; continuous drain current ID is rated -10.5 A at TA=25°C.
8 Drain passive Drain terminal of the P-channel MOSFET; continuous drain current ID is rated -10.5 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -30 V 2
Gate-Source Voltage VGS -25 25 V 2
Continuous Drain Current ID -10.5 A TA=25°C 2
Continuous Drain Current ID -8 A TA=70°C 2
Maximum Power Dissipation PD 3.1 W TA=25°C 2
Maximum Power Dissipation PD 2 W TA=70°C 2
Pulsed Drain Current IDM -80 A 2
Avalanche Current, Single Pulsed IAS -18.5 A Tj=25℃,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 51 mJ Tj=25℃,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 32 40 °C/W Single Operation 2
Junction-to-Lead Thermal Resistance RθJL 3.2 4 °C/W Single Operation 2
Drain-to-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS=-30V 3
Gate-to-source Leakage Current IGSS -100 100 nA VGS=±25V, VDS=0V 3
Gate Threshold Voltage VGS(TH) -1 -1.5 -2 V VGS=VDS, ID=-250uA 3
Drain-to-source On-resistance RDS(on) 13.5 21 mΩ VGS=-10V, ID=-10A 3
Drain-to-source On-resistance RDS(on) 18.5 27 mΩ VGS=-4.5V, ID=-7A 3
Forward Voltage VSD -0.75 -1 V VGS=0V, ISD=-1.0A 3

CAD (KiCad official)

  • Symbol: FDS4435A-ES
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds4435a-es-etched.step / fds4435a-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4435a-es.step / fds4435a-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 e2904d5c4ccb810c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF