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Contents

README

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FDS2734

onsemi · MOSFETs · SOP-8

FDS2734 from onsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied to pins 2 and 3.
2 S passive Source terminal of the N-channel MOSFET, tied to pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied to pins 1 and 2.
4 G input Gate terminal, rated for ±20 V gate-to-source.
5 D passive Drain terminal, rated 250 V drain-to-source and 3.0 A continuous, tied to pins 6-8.
6 D passive Drain terminal, rated 250 V drain-to-source and 3.0 A continuous, tied to pins 5, 7 and 8.
7 D passive Drain terminal, rated 250 V drain-to-source and 3.0 A continuous, tied to pins 5, 6 and 8.
8 D passive Drain terminal, rated 250 V drain-to-source and 3.0 A continuous, tied to pins 5-7.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage BVDSS 250 V ID = 250µA, VGS = 0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 200V, VGS = 0 3
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 200V, VGS = 0V, TJ = 55oC 3
Gate to Source Leakage Current IGSS -100 100 nA VGS = ±20V, VDS = 0 V 3
Gate to Source Threshold Voltage VGS(th) 2 4 V VGS = VDS, ID = 250µA 3
Drain to Source On Resistance rDS(on) 97 117 mΩ VGS = 10V, ID = 3.0A 3
Drain to Source On Resistance rDS(on) 101 126 mΩ VGS = 6V, ID = 2.8A 3
Drain to Source On Resistance rDS(on) 205 225 mΩ VGS = 10V, ID = 3.0A, TJ = 125oC 3
Input Capacitance Ciss 1960 2610 pF VDS = 100V, VGS = 0V, f = 1MHz 3
Output Capacitance Coss 85 130 pF VDS = 100V, VGS = 0V, f = 1MHz 3
Reverse Transfer Capacitance Crss 26 40 pF VDS = 100V, VGS = 0V, f = 1MHz 3
Turn-On Delay Time td(on) 23 37 ns VDD = 125V, ID = 3A, VGS = 10V, RGS = 6Ω 3
Rise Time tr 11 19 ns VDD = 125V, ID = 3A, VGS = 10V, RGS = 6Ω 3
Turn-Off Delay Time td(off) 40 64 ns VDD = 125V, ID = 3A, VGS = 10V, RGS = 6Ω 3
Fall Time tf 11 19 ns VDD = 125V, ID = 3A, VGS = 10V, RGS = 6Ω 3
Total Gate Charge Qg 32 45 nC VDS = 125V, VGS = 10V, ID = 3.0A 3
Source to Drain Diode Voltage VSD 0.74 1.2 V ISD = 3.0A 3
Reverse Recovery Time trr 72 108 ns IF = 3.0 A, diF/dt = 100A/µs 3
Reverse Recovery Charge Qrr 185 278 nC IF = 3.0 A, diF/dt = 100A/µs 3
Drain to Source Voltage VDS 250 V 2
Gate to Source Voltage VGS -20 20 V 2
Drain Current - Continuous ID 3 A Note 1a 2
Drain Current - Pulsed ID 50 A 2
Single Pulse Avalanche Energy EAS 12.5 mJ Note 3 2
Power Dissipation PD 2.5 W Note 1a 2
Power Dissipation PD 1 W Note 1b 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 50 C/W Note 1a 2
Thermal Resistance, Junction to Ambient RθJA 125 C/W Note 1b 2
Thermal Resistance, Junction to Case RθJC 25 C/W Note 1 2

CAD (KiCad official)

  • Symbol: FDS2734
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds2734-etched.step / fds2734-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds2734.step / fds2734.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 b63be0318b6954f2, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF