component

FDS2672-NL-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfds2672-nl-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13d ago
viewers fds2672-nl-vb: viewers · Ray 13d ago
fds2672-nl-vb-etched.glb Publish 0.1.0 · Ray 13d ago
fds2672-nl-vb-etched.step fds2672-nl-vb: factory component page (tier=lcsc) · Ray 13d ago
fds2672-nl-vb-hero.glb fds2672-nl-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 13d ago
fds2672-nl-vb-hero.overlay.json Publish 0.1.0 · Ray 13d ago
fds2672-nl-vb.glb Publish 0.1.0 · Ray 13d ago
fds2672-nl-vb.kicad_mod Publish 0.1.0 · Ray 13d ago
fds2672-nl-vb.kicad_sym Publish 0.1.0 · Ray 13d ago
fds2672-nl-vb.lbr Publish 0.1.0 · Ray 13d ago
fds2672-nl-vb.step Publish 0.1.0 · Ray 13d ago
package.json Publish 0.1.0 · Ray 13d ago
page.json Set visibility: public · Ray 13d ago
README.md Publish 0.1.0 · Ray 13d ago

FDS2672-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS2672-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; continuous source (diode) current is rated 2.6 A (10 s) and 1.3 A (steady state).
2 S passive Source of the N-channel MOSFET, tied to the same source as pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied to the same source as pins 1 and 2.
4 G input Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V with a threshold voltage VGS(th) of 2.0 V at 250 µA.
5 D passive Drain of the N-channel MOSFET, rated 200 V drain-source with 5.2 A continuous (10 s) and 40 A pulsed drain current.
6 D passive Drain of the N-channel MOSFET, connected to the same drain as pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET, connected to the same drain as pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET, connected to the same drain as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current, 10 s ID 5.2 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous Drain Current, steady state ID 3.35 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 10 s ID 4.6 A TJ = 150 °C, TA = 70 °C, 10 s 1
Continuous Drain Current, steady state ID 2.7 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM 40 A 1
Avalanche Current IAS 15 A L = 0.1 mH 1
Continuous Source Current, 10 s IS 2.6 A Diode conduction, 10 s 1
Continuous Source Current, steady state IS 1.3 A Diode conduction, steady state 1
Maximum Power Dissipation, 10 s PD 3.1 W TA = 25 °C, 10 s 1
Maximum Power Dissipation, steady state PD 1.56 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 10 s PD 2 W TA = 70 °C, 10 s 1
Maximum Power Dissipation, steady state PD 1 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 10 s RthJA 33 40 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance, steady state RthJA 65 80 °C/W Steady State 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 17 21 °C/W Steady State 1
Gate Threshold Voltage VGS(th) 2 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 160 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 160 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 40 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = 10 V, ID = 4.0 A 2
Drain-Source On-State Resistance RDS(on) 0.072 Ω VGS = 6.0 V, ID = 4.0 A 2
Diode Forward Voltage VSD 0.75 1.2 V IS = 2.8 A, VGS = 0 V 2
Total Gate Charge Qg 34 42 nC VDS = 100 V, VGS = 10 V, ID = 4.0 A 2
Gate Resistance Rg 0.2 0.85 1.3 Ω 2
Turn-On Delay Time td(on) 14 20 ns VDD = 100 V, RL = 25 Ω, ID ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time tr 20 30 ns VDD = 100 V, RL = 25 Ω, ID ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 32 50 ns VDD = 100 V, RL = 25 Ω, ID ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time tf 25 35 ns VDD = 100 V, RL = 25 Ω, ID ≅ 4.0 A, VGEN = 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 70 100 ns IF = 2.8 A, dI/dt = 100 A/µs 2
Forward Transconductance gfs 19 S VDS = 15 V, ID = 5 A 2
Gate-Source Charge Qgs 7.5 nC VDS = 100 V, VGS = 10 V, ID = 4.0 A 2
Gate-Drain Charge Qgd 12 nC VDS = 100 V, VGS = 10 V, ID = 4.0 A 2

CAD (KiCad official)

  • Symbol: FDS2672-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds2672-nl-vb-etched.step / fds2672-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds2672-nl-vb.step / fds2672-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 6258a5c2f75c44f5, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF