component
FDS2572
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS2572
onsemi · MOSFETs · SO-8
FDS2572 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the gate-to-source rating is ±20 V and the drain-to-source rating is 150 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the gate-to-source rating is ±20 V and the drain-to-source rating is 150 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the gate-to-source rating is ±20 V and the drain-to-source rating is 150 V. |
| 4 | G | input | Gate terminal of the MOSFET; gate-to-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal; drain-to-source voltage is rated at 150 V, and the drain pins form the solder mounting surface used as the case thermal reference. |
| 6 | D | passive | Drain terminal; drain-to-source voltage is rated at 150 V, and the drain pins form the solder mounting surface used as the case thermal reference. |
| 7 | D | passive | Drain terminal; drain-to-source voltage is rated at 150 V, and the drain pins form the solder mounting surface used as the case thermal reference. |
| 8 | D | passive | Drain terminal; drain-to-source voltage is rated at 150 V, and the drain pins form the solder mounting surface used as the case thermal reference. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 150 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, continuous | ID | 4.9 | A | TC = 25oC, VGS = 10V, RθJA = 50 oC/W | 1 | ||
| Drain Current, continuous | ID | 3.1 | A | TC = 100oC, VGS = 10V, RθJA = 50 oC/W | 1 | ||
| Power dissipation | PD | 2.5 | W | 1 | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 150 | oC | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 25 | oC/W | NOTE1 | 1 | ||
| Thermal Resistance Junction to Case at 10 seconds | RθJA | 50 | oC/W | NOTE2 | 1 | ||
| Thermal Resistance Junction to Case at steady state | RθJA | 85 | oC/W | NOTE2 | 1 | ||
| Drain to Source Breakdown Voltage | BVDSS | 150 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 120V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 120V, VGS = 0V, TC = 150oC | 2 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate to Source Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250µA | 2 | |
| Drain to Source On Resistance | rDS(ON) | 0.04 | 0.047 | Ω | ID = 4.9A, VGS = 10V | 2 | |
| Drain to Source On Resistance | rDS(ON) | 0.044 | 0.053 | Ω | ID = 4.9A, VGS = 6V | 2 | |
| Input Capacitance | CISS | 2050 | 2870 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 2 | |
| Output Capacitance | COSS | 220 | 310 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 2 | |
| Reverse Transfer Capacitance | CRSS | 48 | 80 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 2 | |
| Total Gate Charge at 10V | Qg(TOT) | 29 | 38 | nC | VGS = 0V to 10V, VDD = 75V, ID = 4.9A, Ig = 1.0mA | 2 | |
| Threshold Gate Charge | Qg(TH) | 4 | 6 | nC | VGS = 0V to 2V | 2 | |
| Turn-On Time | tON | 27 | ns | VDD = 75V, ID = 4.9A, VGS = 10V, RG = 10Ω | 2 | ||
| Turn-Off Time | tOFF | 100 | ns | VDD = 75V, ID = 4.9A, VGS = 10V, RG = 10Ω | 2 | ||
| Source to Drain Diode Voltage | VSD | 1.25 | V | ISD = 4.9A | 2 | ||
| Source to Drain Diode Voltage | VSD | 1 | V | ISD = 3.1A | 2 | ||
| Reverse Recovery Time | trr | 72 | ns | ISD = 4.9A, dISD/dt = 100A/µs | 2 | ||
| Reverse Recovered Charge | QRR | 158 | nC | ISD = 4.9, dISD/dt = 100A/µs | 2 | ||
| Gate Resistance | Rg | 0.1 | 1.3 | 3 | Ω | 2 |
CAD (KiCad official)
- Symbol:
FDS2572 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds2572-etched.step/fds2572-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds2572.step/fds2572.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (12 pp, sha256
d0bf106aca70c23d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).