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FDP8D5N10C

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UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDP8D5N10C

UMW · MOSFETs · TO-220

FDP8D5N10C from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±20 V, with RDS(ON) < 8.5 mΩ at VGS=10 V.
2 D passive Drain; drain-to-source voltage rated 100 V with 76 A continuous drain current at TC=25°C.
3 S passive Source; 76 A maximum continuous diode forward current and 304 A pulsed.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 3
Gate to Source Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=130µA 3
Static Drain to Source On Resistance RDS(ON) 7.4 8.5 mΩ VGS=10V, ID=76A 3
Zero Gate Voltage Drain Current IDSS 0.1 1 µA VDS=80V, VGS=0V 3
Zero Gate Voltage Drain Current (150°C) IDSS 500 µA VDS=80V, TJ=150°C 3
Gate to Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Input Capacitance Ciss 1765 2475 pF VDS=50V, VGS=0V, f=1MHz 3
Output Capacitance Coss 1010 1415 pF VDS=50V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 16 25 pF VDS=50V, VGS=0V, f=1MHz 3
Gate Resistance Rg 0.8 1.6 Ω 3
Turn-On Delay Time tD(on) 12 22 ns VDD=50V, ID=76A, VGS=10V, RGEN=6Ω 3
Rise Time tr 11 20 ns VDD=50V, ID=76A, VGS=10V, RGEN=6Ω 3
Turn-Off Delay Time tD(off) 18 28 ns VDD=50V, ID=76A, VGS=10V, RGEN=6Ω 3
Fall Time tf 4 10 ns VDD=50V, ID=76A, VGS=10V, RGEN=6Ω 3
Total Gate Charge Qg 25 34 nC VGS=0V to 10 V, VDD=50V, ID=76A 3
Maximum Continuous Drain to Source Diode Forward Current IS 76 A 3
Maximum Pulsed Drain to Source Diode Forward Current ISM 304 A 3
Source to Drain Diode Forward Voltage VSD 1 1.3 V VGS=0V, IS=76 A 4
Reverse Recovery Time trr 58 92 ns VGS=0V, VDD=50V, IF=76A, dIF/dt=100A/μs 4
Reverse Recovery Charge Qrr 53 85 nC VGS=0V, VDD=50V, IF=76A, dIF/dt=100A/μs 4
Reverse Recovery Time trr 51 81 ns VGS=0V, VDD=50V, IF=76A, dIF/dt=300A/μs 4
Reverse Recovery Charge Qrr 141 226 nC VGS=0V, VDD=50V, IF=76A, dIF/dt=300A/μs 4
Drain to Source Voltage VDS 100 V TC=25°C 1
Gate to Source Voltage VGS -20 20 V TC=25°C 1
Drain Current - Continuous ID 76 A TC=25°C 1
Drain Current - Continuous ID 54 A TC=100°C 1
Drain Current - Pulsed ID 304 A 1
Single Pulse Avalanche Energy EAS 181 mJ 1
Power Dissipation PD 107 W TC=25°C 1
Power Dissipation PD 2.4 W TA=25°C 1
Storage Temperature Range TJ, TSTG -55 175 °C 1
Thermal Resistance, Junction to Case RθJC 1.4 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W 2
Forward Transconductance gFS 68 S VDS=5V, ID=76A 3
Gate to Source Gate Charge Qgs 9 nC VDD=50V, ID=76A 3
Gate to Drain Miller Charge Qgd 5 nC VDD=50V, ID=76A 3
Output Charge Qoss 68 nC VDD=50V, VGS=0V 3
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 57 mV/°C ID=250µA, Referenced to 25°C 3

CAD (KiCad official)

  • Symbol: FDP8D5N10C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fdp8d5n10c-etched.step / fdp8d5n10c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdp8d5n10c.step / fdp8d5n10c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 aa6ef1de240c45a3, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF