component
FDP8870
Public Made by Adomby adom
onsemi MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDP8870
onsemi · MOSFETs · ITO-220AB-3
FDP8870 from onsemi, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, rated for VGS of ±20 V maximum with rDS(ON) specified at VGS = 10 V and 4.5 V. |
| 2 | D | passive | Drain, connected internally to the flange; rated for VDSS of 30 V and 156 A continuous (package limited to 80 A). |
| 3 | S | passive | Source; main current return of the N-channel MOSFET, with rDS(ON) of 4.1 mΩ max at VGS = 10 V, ID = 35 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | ITO-220AB-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 30 | V | ID = 250µA, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 24V, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 24V, VGS = 0V, TC = 150oC | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(TH) | 1.2 | 2.5 | V | VGS = VDS, ID = 250µA | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.0034 | 0.0041 | Ω | ID = 35A, VGS = 10V | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.004 | 0.0046 | Ω | ID = 35A, VGS = 4.5V | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.0051 | 0.0065 | Ω | ID = 35A, VGS = 10V, TJ = 175oC | 3 | |
| Total Gate Charge at 10V | Qg(TOT) | 106 | 132 | nC | VGS = 0V to 10V, VDD = 15V, ID = 35A, Ig = 1.0mA | 3 | |
| Total Gate Charge at 5V | Qg(5) | 56 | 69 | nC | VGS = 0V to 5V, VDD = 15V, ID = 35A, Ig = 1.0mA | 3 | |
| Threshold Gate Charge | Qg(TH) | 5 | 6.5 | nC | VGS = 0V to 1V, VDD = 15V, ID = 35A, Ig = 1.0mA | 3 | |
| Turn-On Time | tON | 168 | ns | VDD = 15V, ID = 35A, VGS = 4.5V, RGS = 3.3Ω | 3 | ||
| Turn-Off Time | tOFF | 173 | ns | VDD = 15V, ID = 35A, VGS = 4.5V, RGS = 3.3Ω | 3 | ||
| Source to Drain Diode Voltage | VSD | 1.25 | V | ISD = 35A | 3 | ||
| Source to Drain Diode Voltage | VSD | 1 | V | ISD = 15A | 3 | ||
| Reverse Recovery Time | trr | 37 | ns | ISD = 35A, dISD/dt = 100A/µs | 3 | ||
| Reverse Recovered Charge | QRR | 21 | nC | ISD = 35A, dISD/dt = 100A/µs | 3 | ||
| Drain to Source Voltage | VDSS | 30 | V | TC = 25°C | 2 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TC = 25°C | 2 | |
| Continuous Drain Current | ID | 156 | A | TC = 25oC, VGS = 10V (Note 1) | 2 | ||
| Continuous Drain Current | ID | 147 | A | TC = 25oC, VGS = 4.5V (Note 1) | 2 | ||
| Continuous Drain Current | ID | 19 | A | Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W | 2 | ||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | Note 2 | 2 | ||
| Power dissipation | PD | 160 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | oC | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 0.94 | oC/W | TO-220 | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62 | oC/W | TO-220 (Note 3) | 2 | ||
| Power Dissipation Derating | 1.07 | W/oC | Derate above 25oC | 2 | |||
| Input Capacitance | CISS | 5200 | pF | VDS = 15V, VGS = 0V, f = 1MHz | 3 | ||
| Output Capacitance | COSS | 970 | pF | VDS = 15V, VGS = 0V, f = 1MHz | 3 | ||
| Reverse Transfer Capacitance | CRSS | 570 | pF | VDS = 15V, VGS = 0V, f = 1MHz | 3 | ||
| Gate Resistance | RG | 2.1 | Ω | VGS = 0.5V, f = 1MHz | 3 | ||
| Gate to Source Gate Charge | Qgs | 15 | nC | VDD = 15V, ID = 35A, Ig = 1.0mA | 3 | ||
| Gate Charge Threshold to Plateau | Qgs2 | 10 | nC | VDD = 15V, ID = 35A, Ig = 1.0mA | 3 | ||
| Gate to Drain Miller Charge | Qgd | 23 | nC | VDD = 15V, ID = 35A, Ig = 1.0mA | 3 | ||
| Turn-On Delay Time | td(ON) | 11 | ns | VDD = 15V, ID = 35A, VGS = 4.5V, RGS = 3.3Ω | 3 | ||
| Rise Time | tr | 105 | ns | VDD = 15V, ID = 35A, VGS = 4.5V, RGS = 3.3Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 70 | ns | VDD = 15V, ID = 35A, VGS = 4.5V, RGS = 3.3Ω | 3 | ||
| Fall Time | tf | 46 | ns | VDD = 15V, ID = 35A, VGS = 4.5V, RGS = 3.3Ω | 3 |
CAD (KiCad official)
- Symbol:
FDP8870 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: ITO-220AB-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (12 pp, sha256
9553be3d6fe2d30c, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).