component
FDP86363-F085
Public Made by Adomby adom
onsemi MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownFDP86363-F085
onsemi · MOSFETs · TO-220AB
FDP86363-F085 from onsemi, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and a threshold of 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 80 V and continuous current 110 A at TC = 25°C (limited by bondwire configuration), connected to the case tab. |
| 3 | S | passive | Source; current return of the MOSFET and anode of the body diode, with VSD max 1.25 V at ISD = 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 80 | V | TJ = 25°C | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | TJ = 25°C | 1 | |
| Drain Current - Continuous | ID | 110 | A | VGS=10, TC = 25°C (Note 1) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 512 | mJ | Note 2 | 1 | ||
| Power Dissipation | PD | 300 | W | 1 | |||
| Power Dissipation Derating | 2 | W/oC | Derate above 25oC | 1 | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | oC | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.5 | oC/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 43 | oC/W | Note 3, 1 in2 pad of 2oz copper | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 80 | V | ID = 250μA, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS = 80V, VGS = 0V, TJ = 25oC | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | mA | VDS = 80V, VGS = 0V, TJ = 175oC (Note 4) | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate to Source Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS = VDS, ID = 250μA | 2 |
| Drain to Source On Resistance | RDS(on) | 2.4 | 2.8 | mΩ | ID = 80A, VGS = 10V, TJ = 25oC | 2 | |
| Drain to Source On Resistance | RDS(on) | 3.8 | 4.3 | mΩ | ID = 80A, VGS = 10V, TJ = 175oC (Note 4) | 2 | |
| Total Gate Charge at 10V | Qg(ToT) | 131 | 150 | nC | VGS = 0 to 10V, VDD = 64V, ID = 80A | 2 | |
| Threshold Gate Charge | Qg(th) | 18 | 21 | nC | VGS = 0 to 2V, VDD = 64V, ID = 80A | 2 | |
| Turn-On Time | ton | 231 | ns | VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω | 2 | ||
| Turn-Off Time | toff | 135 | ns | VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω | 2 | ||
| Source-to-Drain Diode Voltage | VSD | 1.25 | V | ISD = 80A, VGS = 0V | 2 | ||
| Source-to-Drain Diode Voltage | VSD | 1.2 | V | ISD = 40A, VGS = 0V | 2 | ||
| Reverse-Recovery Time | trr | 88 | 101 | ns | IF = 80A, dISD/dt = 100A/μs, VDD=64V | 2 | |
| Reverse-Recovery Charge | Qrr | 129 | 157 | nC | IF = 80A, dISD/dt = 100A/μs, VDD=64V | 2 | |
| Input Capacitance | Ciss | 10000 | pF | VDS = 40V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 1400 | pF | VDS = 40V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 95 | pF | VDS = 40V, VGS = 0V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 3.3 | Ω | f = 1MHz | 2 | ||
| Gate-to-Source Gate Charge | Qgs | 47 | nC | VDD = 64V, ID = 80A | 2 | ||
| Gate-to-Drain Miller Charge | Qgd | 24 | nC | VDD = 64V, ID = 80A | 2 | ||
| Turn-On Delay | td(on) | 38 | ns | VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω | 2 | ||
| Rise Time | tr | 129 | ns | VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω | 2 | ||
| Turn-Off Delay | td(off) | 64 | ns | VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω | 2 | ||
| Fall Time | tf | 40 | ns | VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. | 1 |
CAD (KiCad official)
- Symbol:
FDP86363-F085 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
fdp86363-f085-etched.step/fdp86363-f085-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdp86363-f085.step/fdp86363-f085.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
40e85c4beb6f9bef, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).