component
FDP20N50-VB
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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDP20N50-VB
VBsemi Elec · MOSFETs · TO-220AB
FDP20N50-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage VGS is rated ±30 V absolute maximum. |
| 2 | D | passive | Drain terminal; the drain-source voltage VDS is rated 650 V. |
| 3 | S | passive | Source terminal; the continuous source-drain diode current IS is rated 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 13 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Linear Derating Factor | 1.7 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 367 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 208 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Voltage Slope | dV/dt | 37 | V/ns | TJ = 125 °C | 1 | ||
| Reverse Diode dV/dt | 31 | V/ns | 1 | ||||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s | 1 | |||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | 0.67 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage (N) | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ± 30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 520 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Rise Time | tr | 34 | 68 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | |
| Turn-On Delay Time | td(on) | 22 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | ||
| Turn-Off Delay Time | td(off) | 68 | 102 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | |
| Fall Time | tf | 42 | 84 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | |
| Continuous Source-Drain Diode Current | IS | 21 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 53 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
FDP20N50-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
fdp20n50-vb-etched.step/fdp20n50-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdp20n50-vb.step/fdp20n50-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
918630ffaf5d0619, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDP20N50-VB
**VBsemi Elec** · MOSFETs · TO-220AB
FDP20N50-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage VGS is rated ±30 V absolute maximum. |
| 2 | D | passive | Drain terminal; the drain-source voltage VDS is rated 650 V. |
| 3 | S | passive | Source terminal; the continuous source-drain diode current IS is rated 21 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 20 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 13 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 60 | A | | 1 |
| Linear Derating Factor | | | | 1.7 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 367 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 208 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-Source Voltage Slope | dV/dt | | | 37 | V/ns | TJ = 125 °C | 1 |
| Reverse Diode dV/dt | | | | 31 | V/ns | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | | | 62 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) Thermal Resistance | RthJC | | | 0.5 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 650 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| VDS Temperature Coefficient | VDS/TJ | | 0.67 | | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Gate-Source Threshold Voltage (N) | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Gate-Source Leakage | IGSS | -1 | | 1 | μA | VGS = ± 30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 520 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 |
| Rise Time | tr | | 34 | 68 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Turn-On Delay Time | td(on) | | 22 | | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Turn-Off Delay Time | td(off) | | 68 | 102 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Fall Time | tf | | 42 | 84 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Continuous Source-Drain Diode Current | IS | | | 21 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 53 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.9 | 1.2 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 |
## CAD (KiCad official)
- Symbol: `FDP20N50-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `fdp20n50-vb-etched.step` / `fdp20n50-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdp20n50-vb.step` / `fdp20n50-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/fdp20n50-vb-datasheet.pdf) (8 pp, sha256 `918630ffaf5d0619`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdp20n50-vb-datasheet.pdf)