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FDP036N10A

Public Made by Adom

by adom

UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDP036N10A

UMW · MOSFETs · TO-220

FDP036N10A from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; the gate-to-source voltage is rated VGSS = ±20 V.
2 D passive DRAIN terminal; the drain-to-source voltage is rated VDSS = 100 V and continuous drain current ID = 214 A at TC = 25°C.
3 S passive SOURCE terminal; it is the reference for the gate-to-source rating VGSS = ±20 V.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 100 V 1
Gate to Source Voltage VGSS -20 20 V 1
Drain Current - Continuous ID 214 A TC=25°C (Silicon Limited) 1
Drain Current - Continuous ID 151 A TC=100°C (Silicon Limited) 1
Drain Current - Continuous ID 120 A TC=25°C (Package Limited) 1
Drain Current - Pulsed IDM 856 A 1
Single Pulse Avalanche Energy EAS 658 mJ 1
Peak Diode Recovery dv/dt dv/dt 6 V/ns 1
Power Dissipation PD 333 W TC=25°C 1
Power Dissipation Derating PD 2.22 W/°C Derate Above 25°C 1
Thermal Resistance, Junction to Case RθJC 0.45 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 175 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8 in from case for 5 seconds 2
Drain to Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 3
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ 0.03 V/°C ID=250µA Referenced to 25°C 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=80V, VGS=0V 3
Zero Gate Voltage Drain Current at TJ=150°C IDSS 500 µA VDS=80V, TJ=150°C 3
Gate to Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate to Source Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250µA 3
Static Drain to Source On Resistance RDS(ON) 3.2 3.6 mΩ VGS=10V, ID=75A 3
Forward Transconductance gFS 167 S VDS=10V, ID=75A 3
Input Capacitance Ciss 5485 7295 pF VDS=25V, VGS=0V, f=1MHz 3
Output Capacitance Coss 2430 3230 pF VDS=25V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 210 315 pF VDS=25V, VGS=0V, f=1MHz 3
Total Gate Charge at 10V Qg(tot) 89 116 nC VDD=80V, ID=75A, VGS=10V (Note 4) 3
Equivalent Series Resistance (G-S) ESR 1.2 Ω f=1MHz 3
Maximum Pulsed Drain to Source Diode Forward Current IS 214 A 3
Maximum Pulsed Drain to Source Diode Forward Current ISM 856 A 3

CAD (KiCad official)

  • Symbol: FDP036N10A
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fdp036n10a-etched.step / fdp036n10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdp036n10a.step / fdp036n10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 83a8055339295852, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF