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FDP030N06B-F102

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onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDP030N06B-F102

onsemi · MOSFETs · TO-220

FDP030N06B-F102 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated ±20 V, with threshold VGS(th) of 2 to 4 V at ID = 250 µA.
2 D passive Drain (also connected to the mounting tab); rated 60 V drain-to-source, 195 A silicon-limited and 120 A package-limited continuous at TC = 25°C.
3 S passive Source; carries the return current of up to 195 A (silicon-limited) continuous body-diode forward current.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage BVDSS 60 V ID = 250 μA, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 48 V, VGS = 0 V 3
Gate to Body Leakage Current IGSS -100 100 nA VGS = ±20 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 2 4 V VGS = VDS, ID = 250 μA 3
Static Drain to Source On Resistance RDS(on) 2.67 3.1 mΩ VGS = 10 V, ID = 100 A 3
Input Capacitance Ciss 6035 8030 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 3
Output Capacitance Coss 1685 2240 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 3
Total Gate Charge at 10V Qg(tot) 76 99 nC VDS = 30 V, ID = 100 A, VGS = 10 V 3
Turn-On Delay Time td(on) 32 74 ns VDD = 30 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-On Rise Time tr 33 76 ns VDD = 30 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-Off Delay Time td(off) 56 122 ns VDD = 30 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω 3
Turn-Off Fall Time tf 23 56 ns VDD = 30 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω 3
Maximum Continuous Drain to Source Diode Forward Current IS 195 A 3
Maximum Pulsed Drain to Source Diode Forward Current ISM 780 A 3
Drain to Source Diode Forward Voltage VSD 1.25 V VGS = 0V, ISD = 100 A 3
Drain to Source Voltage VDSS 60 V TC = 25oC 2
Gate to Source Voltage VGSS -20 20 V TC = 25oC 2
Drain Current Continuous, Silicon Limited ID 195 A TC = 25oC, Silicon Limited 2
Drain Current Continuous, Silicon Limited ID 138 A TC = 100 A oC, Silicon Limited 2
Drain Current Continuous, Package Limited ID 120 A TC = 25oC, Package Limited 2
Drain Current Pulsed IDM 780 A Note 1 2
Single Pulsed Avalanche Energy EAS 600 mJ Note 2 2
Peak Diode Recovery dv/dt dv/dt 6 V/ns Note 3 2
Power Dissipation PD 205 W TC = 25oC 2
Power Dissipation Derate Above 25oC 1.37 W/oC Derate Above 25oC 2
Operating and Storage Temperature Range TJ, TSTG -55 175 oC 2
Maximum Lead Temperature for Soldering TL 300 oC 1/8” from Case for 5 Seconds 2
Thermal Resistance, Junction to Case, Max. RθJC 0.73 oC/W 2
Thermal Resistance, Junction to Ambient, Max. RθJA 62.5 oC/W 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.03 V/oC ID = 250 μA, Referenced to 25oC 3
Forward Transconductance gFS 206 S VDS = 10 V, ID = 100 A 3
Reverse Transfer Capacitance Crss 55 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 3
Energy Related Output Capacitance Coss(er) 2619 pF VDS = 30 V, VGS = 0 V 3
Gate to Source Gate Charge Qgs 29 nC VDS = 30 V, ID = 100 A, VGS = 10 V 3
Gate to Drain Miller Charge Qgd 12 nC VDS = 30 V, ID = 100 A, VGS = 10 V 3
Gate Plateau Voltage Vplateau 5.2 V VDS = 30 V, ID = 100 A, VGS = 10 V 3
Output Charge Qoss 92.4 nC VDS = 30V, VGS = 0V 3
Equivalent Series Resistance (G-S) ESR 2 Ω f = 1 MHz 3
Reverse Recovery Time trr 71 ns VGS = 0 V, ISD = 100 A, dIF/dt = 100A/μs 3
Reverse Recovery Charge Qrr 78 nC VGS = 0 V, ISD = 100 A, dIF/dt = 100A/μs 3

CAD (KiCad official)

  • Symbol: FDP030N06B-F102
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fdp030n06b-f102-etched.step / fdp030n06b-f102-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdp030n06b-f102.step / fdp030n06b-f102.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 4c34f09b40c9935a, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF