component
FDN537N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDN537N-HXY
HXY MOSFET · MOSFETs · SOT-23
FDN537N-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; VGS rated ±20 V maximum, with gate threshold 1.0 to 2.5 V at 250 uA and gate leakage up to ±100 nA. |
| 2 | D | passive | Drain of the N-channel MOSFET; VDS rated 30 V maximum, continuous drain current 5.8 A and pulsed 18.4 A. |
| 3 | S | passive | Source of the N-channel MOSFET; continuous body-diode source current is 4.6 A and pulsed 18.4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 28 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 26 | 32 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2.3 | 4.6 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (4.5V) | Qg | 5 | 6.9 | nC | VDS=15V, VGS=4.5V, ID=4A | 2 | |
| Gate-Source Charge | Qgs | 1.1 | 2.2 | nC | VDS=15V, VGS=4.5V, ID=4A | 2 | |
| Gate-Drain Charge | Qgd | 2.6 | 2.8 | nC | VDS=15V, VGS=4.5V, ID=4A | 2 | |
| Turn-On Delay Time | Td(on) | 2 | 4 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=4A | 2 | |
| Rise Time | Tr | 34.4 | 62 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=4A | 2 | |
| Turn-Off Delay Time | Td(off) | 13.2 | 26 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=4A | 2 | |
| Fall Time | Tf | 4.8 | 9.6 | ns | VDD=15V, VGS=10V, RG=3.3Ω, ID=4A | 2 | |
| Input Capacitance | Ciss | 420 | 582 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 60 | 87 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 53 | 71 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 4.6 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 18.4 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 5.8 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 18.4 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | Note 2 | 1 | ||
| BVDSS Temperature Coefficient | △BVDSS/△T | 0.023 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -4.2 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 7 | S | VDS=5V, ID=4A | 2 | ||
| Reverse Recovery Time | trr | 8.7 | nS | IF=4A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 2.3 | nC | IF=4A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
FDN537N-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fdn537n-hxy-etched.step/fdn537n-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdn537n-hxy.step/fdn537n-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
9b6789b4ffa9c110, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).