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Contents

README

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FDN359BN

UMW · MOSFETs · SOT-23

FDN359BN from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 30 V N-channel MOSFET; gate-source voltage is rated ±20 V (VGSS) in the maximum ratings.
2 S passive SOURCE terminal of the MOSFET, the reference for the gate-source rating of ±20 V (VGSS).
3 D passive DRAIN terminal of the MOSFET, rated for a drain-source voltage of 30 V (VDSS) with continuous drain current of 2.7 A (Note 1a).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: FDN359BN
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdn359bn-etched.step / fdn359bn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdn359bn.step / fdn359bn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (8 pp, sha256 4c786d59b9dfeb2c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF