component

FDN338P

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 24d ago
viewers fdn338p: viewers · Ray 24d ago
fdn338p-etched.glb fdn338p: factory component page (tier=lcsc) · Ray 24d ago
fdn338p-etched.step fdn338p: factory component page (tier=lcsc) · Ray 24d ago
fdn338p-hero.glb fdn338p: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
fdn338p-hero.overlay.json Publish 0.1.0 · Ray 24d ago
fdn338p.glb Publish 0.1.0 · Ray 24d ago
fdn338p.kicad_mod Publish 0.1.0 · Ray 24d ago
fdn338p.kicad_sym Publish 0.1.0 · Ray 24d ago
fdn338p.lbr Publish 0.1.0 · Ray 24d ago
fdn338p.step Publish 0.1.0 · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json fdn338p: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 17d ago
README.md fdn338p: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 17d ago

FDN338P

HUASHUO · MOSFETs · SOT-23

FDN338P from HUASHUO, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.3 to -1.0 V at ID=-250uA.
2 S passive Source; continuous source current up to -3 A and diode forward voltage max -1 V at IS=-1A.
3 D passive Drain; drain-source voltage -20 V, continuous drain current -3 A at TA=25℃ and pulsed -12 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -0.3 -0.5 -1 V VGS=VDS, ID=-250uA 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 89 100 mΩ VGS=-4.5V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 130 140 mΩ VGS=-2.5V, ID=-2A 2
Drain-Source Leakage Current IDSS -1 uA VDS=-16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Continuous Source Current IS -3 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -3 A TA=25℃, VGS @ -4.5V 1
Continuous Drain Current ID -2.4 A TA=70℃, VGS @ -4.5V 1
Pulsed Drain Current IDM -12 A 1
Total Power Dissipation PD 1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1

CAD (KiCad official)

  • Symbol: FDN338P
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdn338p-etched.step / fdn338p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdn338p.step / fdn338p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (5 pp, sha256 c693a06b465673ae, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF