component

FDN337N-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorfdn337n-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
fdn337n-hxy / README.md
History Download
Ray Publish 0.1.0 b93775f 17h ago

FDN337N-HXY

HXY MOSFET · MOSFETs · SOT-23

FDN337N-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; gate-source voltage is rated ±12 V absolute maximum, and the device is specified for operation at gate voltages as low as 2.5 V.
2 D passive Drain of the MOSFET; drain-source voltage is rated 30 V and continuous drain current is rated 5 A.
3 S passive Source of the MOSFET; continuous source current is limited to 3.6 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 5 A 1
Drain Current-Pulsed IDM 14.4 A Note 1 1
Maximum Power Dissipation PD 1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 40 mΩ VGS=10V , ID=3A 2
Static Drain-Source On-Resistance RDS(ON) 75 mΩ VGS=4.5V , ID=2A 2
Gate Threshold Voltage VGS(th) 0.4 1.2 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
Continuous Source Current IS 3.6 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Forward Transconductance gfs 10.5 S VDS=5V , ID=3A 2
Total Gate Charge (4.5V) Qg 4.6 nC VDS=15V , VGS=4.5V , ID=3A 2
Gate-Source Charge Qgs 0.7 nC VDS=15V , VGS=4.5V , ID=3A 2
Gate-Drain Charge Qgd 1.5 nC VDS=15V , VGS=4.5V , ID=3A 2
Turn-On Delay Time Td(on) 1.6 ns VDD=10V , VGS=4.5V , RG=3.3 ID=3A 2
Rise Time Tr 42 ns VDD=10V , VGS=4.5V , RG=3.3 ID=3A 2
Turn-Off Delay Time Td(off) 14 ns VDD=10V , VGS=4.5V , RG=3.3 ID=3A 2
Fall Time Tf 7 ns VDD=10V , VGS=4.5V , RG=3.3 ID=3A 2
Input Capacitance Ciss 310 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 49 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 35 pF VDS=15V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: FDN337N-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdn337n-hxy-etched.step / fdn337n-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdn337n-hxy.step / fdn337n-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 f24d5795c7752eaf, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF