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FDN308P

Public Made by Adom

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UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDN308P

UMW · MOSFETs · SOT-23

FDN308P from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the P-channel MOSFET; gate-source voltage is rated VGSS = ±12 V.
2 S passive SOURCE terminal of the P-channel MOSFET; drain-source voltage is rated VDSS = -20 V.
3 D passive DRAIN terminal of the P-channel MOSFET; continuous drain current is rated -1.5 A and pulsed drain current -10 A.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-16V, VGS=0V 2
Gate-Body Leakage, Forward IGSSF 100 nA VDS=0V, VGS=12V 2
Gate-Body Leakage, Reverse IGSSR -100 nA VDS=0V, VGS=-12V 2
Gate Threshold Voltage VGS(th) -0.6 -1.5 V VDS=VGS, ID=-250µA 2
Static Drain-Source On-Resistance (VGS=-4.5V) RDS(ON) 60 70 mΩ VGS=-4.5V, ID=-1.5A 2
Static Drain-Source On-Resistance (VGS=-2.5V) RDS(ON) 70 85 mΩ VGS=-2.5V, ID=-1.3A 2
On-State Drain Current ID(ON) -5 A VGS=-4.5V, VDS=-5V 2
Forward Transconductance gFS 3 12 S VDS=-5V, ID=-1.5A 2
Turn-On Delay Time tD(on) 8 16 ns VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=6Ω 2
Turn-On Rise Time tr 10 20 ns VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=6Ω 2
Turn-Off Delay Time tD(off) 12 22 ns VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=6Ω 2
Turn-Off Fall Time tf 8 16 ns VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=6Ω 2
Total Gate Charge Qg 3.8 5.4 nC VDS=-10V, ID=-1.5A, VGS=-4.5V 2
Maximum Continuous Drain-Source Diode Forward Current IS -0.42 A 3
Drain-Source Diode Forward Voltage VSD -0.7 -1.2 V VGS=0V, IS=-0.42 3
Drain-Source Voltage VDSS -20 V 1
Gate-Source Voltage VGSS -12 12 V 1
Drain Current, Continuous ID -1.5 A Note 1a 1
Drain Current, Pulsed ID -10 A 1
Maximum Power Dissipation PD 0.5 W Note 1a 1
Maximum Power Dissipation PD 0.46 W Note 1b 1
Storage Junction Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 250 °C/W Note 1a: 0.02 in² pad of 2 oz copper 1
Thermal Resistance, Junction-to-Ambient (minimum pad) RθJA 270 °C/W Note 1b: minimum pad 3
Thermal Resistance, Junction-to-Case RθJC 75 °C/W Note 1 1

CAD (KiCad official)

  • Symbol: FDN308P
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdn308p-etched.step / fdn308p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdn308p.step / fdn308p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (8 pp, sha256 22f7d60499e81fe2, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF