component
FDN304P
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| fdn304p-etched.glb | 17d ago |
| fdn304p-etched.step | 17d ago |
| fdn304p-hero.glb | 17d ago |
| fdn304p-hero.overlay.json | 17d ago |
| fdn304p.glb | 17d ago |
| fdn304p.kicad_mod | 17d ago |
| fdn304p.kicad_sym | 17d ago |
| fdn304p.lbr | 17d ago |
| fdn304p.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
FDN304P
UMW · MOSFETs · SOT-23
FDN304P from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; gate-source voltage VGS is rated ±8V. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET; the body diode continuous source-drain current IS is rated -1.2A and pulsed ISM is rated -10A. |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; drain-source voltage VDS is rated -20V and continuous drain current ID is rated -2.4A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 36 | 52 | mΩ | VGS=-4.5V, ID=-2.4A | 2 | |
| Drain-Source On-Resistance (VGS=-2.5V) | RDS(ON) | 47 | 70 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Drain-Source On-Resistance (VGS=-1.8V) | RDS(ON) | 65 | 100 | mΩ | VGS=-1.8V, ID=-1.8A | 2 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS=VGS, ID=-250µA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS=±8V, VDS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-16V, VGS=0V | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-1A, VGS=0V | 2 | ||
| Gate Resistance | Rg | 0.5 | 3.2 | Ω | f=1MHz | 2 | |
| Continuous Source-Drain Diode Current | IS | -1.2 | A | TC=25°C | 2 | ||
| Pulsed Diode Forward Current | ISM | -10 | A | 2 | |||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -2.4 | A | 1 | |||
| Pulsed Drain Current | IDM | -10 | A | 1 | |||
| Power Dissipation | PD | 1.1 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 250 | °C/W | t≤10s | 1 |
CAD (KiCad official)
- Symbol:
FDN304P - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fdn304p-etched.step/fdn304p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdn304p.step/fdn304p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (8 pp, sha256
039d4722c05c1723, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).