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FDMS86250-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDMS86250-VB

VBsemi Elec · MOSFETs · DFN5x6-8

FDMS86250-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; pin 1 is marked with a dot on the package.
2 S passive Source terminal of the N-channel MOSFET.
3 S passive Source terminal of the N-channel MOSFET.
4 G input Gate terminal; VGS rated at ±20 V maximum, with a threshold of 2.0 to 4.0 V.
5 D passive Drain terminal; VDS is rated at 150 V maximum.
6 D passive Drain terminal; VDS is rated at 150 V maximum.
7 D passive Drain terminal; VDS is rated at 150 V maximum.
8 D passive Drain terminal; VDS is rated at 150 V maximum.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 53.7 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 43 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current ID 12.8 A Tb, A = 25 °C 1
Continuous Drain Current ID 10.2 A Tb, A = 70 °C 1
Pulsed Drain Current IDM 130 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 60 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 5.6 A Tb, A = 25 °C 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 45 mJ 1
Maximum Power Dissipation PD 104 W TC = 25 °C 1
Maximum Power Dissipation PD 66.6 W TC = 70 °C 1
Maximum Power Dissipation PD 6.25 W Tb, A = 25 °C 1
Maximum Power Dissipation PD 4 W Tb, A = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 15 20 °C/W t = 10 s 1
Maximum Junction-to-Ambient (steady state) RthJA 54 °C/W Steady state (from note f) 1
Maximum Junction-to-Case (Drain), Steady State RthJC 0.9 1.2 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 150 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 150 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 150 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 40 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0158 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.0188 Ω VGS = 7.5 V, ID = 15 A 2
Total Gate Charge Qg 31.3 47 nC VDS = 75 V, VGS = 10 V, ID = 20 A 2
Total Gate Charge Qg 22.8 35 nC VDS = 75 V, VGS = 7.5 V, ID = 20 A 2
Output Charge Qoss 66 100 nC VDS = 75 V, VGS = 0 V 2
Gate Resistance Rg 0.3 1 2 Ω f = 1 MHz 2
Turn-On Delay Time (VGEN = 10 V) td(on) 10 20 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 12 24 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 15 30 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 7 14 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 7.5 V) td(on) 12 24 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 7.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 7.5 V) tr 13 26 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 7.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 7.5 V) td(off) 17 34 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 7.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 7.5 V) tf 8 16 ns VDD = 75 V, RL = 3.75 Ω, ID 20 A, VGEN = 7.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.77 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Time trr 95 190 ns IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 280 560 nC IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The DFN5X 6X is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process 1

CAD (KiCad official)

  • Symbol: FDMS86250-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: fdms86250-vb-etched.step / fdms86250-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdms86250-vb.step / fdms86250-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 eceea9838e66b07f, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF