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FDMS86163P-VB

VBsemi Elec · MOSFETs · DFN5x6-8

FDMS86163P-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET (pin 1, marked with dot); VDS rated -100 V.
2 S passive Source terminal of the P-channel MOSFET; VDS rated -100 V.
3 S passive Source terminal of the P-channel MOSFET; VDS rated -100 V.
4 G input Gate terminal; gate-source voltage limited to ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; VDS rated -100 V.
6 D passive Drain terminal of the P-channel MOSFET; VDS rated -100 V.
7 D passive Drain terminal of the P-channel MOSFET; VDS rated -100 V.
8 D passive Drain terminal of the P-channel MOSFET; VDS rated -100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -27 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID 22.2 A TJ = 150 °C; TA = 25 °C (note b) 1
Continuous Drain Current ID -26.1 A TJ = 150 °C; TA = 70 °C (note b) 1
Pulsed Drain Current IDM -15 A 1
Avalanche Current Pulse IAS -4.5 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 10.1 mJ 1
Continuous Source-Drain Diode Current IS 6.9 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C (note b) 1
Maximum Power Dissipation PD 10.4 W TC = 25 °C 1
Maximum Power Dissipation PD 6.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.1 W TA = 25 °C (note b) 1
Maximum Power Dissipation PD 2 W TA = 70 °C (note b) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (steady state) RthJA 33 40 °C/W Steady state; surface mounted on 1in x 1in FR4 board (note b) 1
Maximum Junction-to-Case (steady state) RthJC 0.98 1.2 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -100 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.8 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -120 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.032 Ω VGS = -10 V, ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.036 Ω VGS = -4.5 V, ID = -2 A 2
Forward Transconductance gfs 20 S VDS = -15 V, ID = -5 A 2
Total Gate Charge Qg 76 115 nC VDS = -30 V, VGS = -10 V, ID = -5 A 2
Total Gate Charge Qg 38 60 nC VDS = -30 V, VGS = -4.5 V, ID = -5 A 2
Turn-On Delay Time td(on) 10 15 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -6.9 A TC = 25 °C 2
Pulse Diode Forward Current ISM -15 A 2
Body Diode Voltage VSD -1 -1.5 V IS = -3 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = -5 A, di/dt = 10 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = -5 A, di/dt = 10 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: FDMS86163P-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: fdms86163p-vb-etched.step / fdms86163p-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdms86163p-vb.step / fdms86163p-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 26529d55b2c11ab7, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF