component

FDMS86150A-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfdms86150a-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers fdms86150a-vb: viewers · Ray 9d ago
fdms86150a-vb-etched.glb Publish 0.1.0 · Ray 9d ago
fdms86150a-vb-etched.step fdms86150a-vb: factory component page (tier=lcsc) · Ray 9d ago
fdms86150a-vb-hero.glb fdms86150a-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
fdms86150a-vb-hero.overlay.json Publish 0.1.0 · Ray 9d ago
fdms86150a-vb.glb Publish 0.1.0 · Ray 9d ago
fdms86150a-vb.kicad_mod Publish 0.1.0 · Ray 9d ago
fdms86150a-vb.kicad_sym Publish 0.1.0 · Ray 9d ago
fdms86150a-vb.lbr Publish 0.1.0 · Ray 9d ago
fdms86150a-vb.step Publish 0.1.0 · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago

FDMS86150A-VB

VBsemi Elec · MOSFETs · DFN5x6-8

FDMS86150A-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 marked by the dot on the DFN5X6 top view; the continuous source current (diode conduction) is rated 170 A.
2 S passive Source of the N-channel MOSFET, tied to the same source node as pins 1 and 3; the continuous source current (diode conduction) is rated 170 A.
3 S passive Source of the N-channel MOSFET, tied to the same source node as pins 1 and 2; the continuous source current (diode conduction) is rated 170 A.
4 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of 1 V min to 3 V max at 250 µA.
5 D passive Drain of the N-channel MOSFET, rated 100 V drain-source with 105 A continuous drain current at TC = 25 °C.
6 D passive Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 7 and 8, rated 100 V drain-source.
7 D passive Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 8, rated 100 V drain-source.
8 D passive Drain of the N-channel MOSFET, tied to the same drain node as pins 5, 6 and 7, with a pulsed drain current rating of 315 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

CAD (KiCad official)

  • Symbol: FDMS86150A-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: fdms86150a-vb-etched.step / fdms86150a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdms86150a-vb.step / fdms86150a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 2782bd66efb93160, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF