FDMS86105-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the N-channel MOSFET (pin 1, marked with a dot on the package).
2	S	passive	Source terminal of the N-channel MOSFET.
3	S	passive	Source terminal of the N-channel MOSFET.
4	G	input	Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V maximum.
5	D	passive	Drain terminal of the N-channel MOSFET, rated at 100 V VDS.
6	D	passive	Drain terminal of the N-channel MOSFET, rated at 100 V VDS.
7	D	passive	Drain terminal of the N-channel MOSFET, rated at 100 V VDS.
8	D	passive	Drain terminal of the N-channel MOSFET, rated at 100 V VDS.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	DFN5x6-8
Category	Triode/MOS Tube/Transistor
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			100	V		1
Gate-source voltage	VGS	-20		20	V		1
Continuous drain current	ID			65	A	TJ = 150 °C; TC = 25 °C	1
Continuous drain current	ID			60	A	TJ = 150 °C; TC = 70 °C	1
Continuous drain current	ID			20	A	TA = 25 °C; notes b, c (surface mounted 1" x 1" FR4, t = 10 s)	1
Continuous drain current	ID			18.5	A	TA = 70 °C; notes b, c (surface mounted 1" x 1" FR4, t = 10 s)	1
Pulsed drain current	IDM			180	A	t = 100 μs	1
Continuous source-drain diode current	IS			60	A	TC = 25 °C	1
Continuous source-drain diode current	IS			4.8	A	TA = 25 °C; notes b, c (surface mounted 1" x 1" FR4, t = 10 s)	1
Single pulse avalanche current	IAS			30	A	L = 0.1 mH	1
Single pulse avalanche energy	EAS			40	mJ		1
Maximum power dissipation	PD			80	W	TC = 25 °C	1
Maximum power dissipation	PD			50	W	TC = 70 °C	1
Maximum power dissipation	PD			5	W	TA = 25 °C; notes b, c (surface mounted 1" x 1" FR4, t = 10 s)	1
Maximum power dissipation	PD			3.2	W	TA = 70 °C; notes b, c (surface mounted 1" x 1" FR4, t = 10 s)	1
Operating junction and storage temperature range	TJ, Tstg	-55		150	°C		1
Soldering recommendations (peak temperature)				260	°C		1
Maximum junction-to-ambient thermal resistance	RthJA		20	25	°C/W	t ≤ 10 s; notes b, c (surface mounted)	1
Maximum junction-to-case (drain) thermal resistance	RthJC		1.6	2	°C/W	Steady state	1
Drain-source breakdown voltage	VDS	100			V	VGS = 0 V, ID = 250 μA	2
VDS temperature coefficient	VDS/TJ		81		mV/°C	ID = 10 mA	2
VGS(th) temperature coefficient	VGS(th)/TJ		-7.5		mV/°C	ID = 250 μA	2
Gate-source threshold voltage	VGS(th)	3		5	V	VDS = VGS, ID = 250 μA	2
Gate-source leakage	IGSS			100	nA	VDS = 0 V, VGS = ±20 V	2
Zero gate voltage drain current	IDSS			1	μA	VDS = 100 V, VGS = 0 V	2
Zero gate voltage drain current	IDSS			15	μA	VDS = 100 V, VGS = 0 V, TJ = 70 °C	2
On-state drain current	ID(on)	40			A	VDS ≥ 10 V, VGS = 10 V	2
Gate resistance	Rg	0.2	0.76	1.4	Ω	f = 1 MHz	2
Turn-on delay time	td(on)		12	24	ns	VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1	2
Rise time	tr		5	10	ns	VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1	2
Turn-off delay time	td(off)		19	38	ns	VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1	2
Fall time	tf		5	10	ns	VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 10 V, Rg = 1	2
Turn-on delay time	td(on)		15	30	ns	VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 7.5 V, Rg = 1	2
Rise time	tr		6	12	ns	VDD = 50 V, RL = 5, ID ≈ 10 A, VGEN = 7.5 V, Rg = 1	2
Continuous source-drain diode current	IS			60	A	TC = 25 °C	2
Pulse diode forward current	ISM			80	A		2
Body diode voltage	VSD		0.78	1.1	V	IS = 5 A, VGS = 0 V	2
Body diode reverse recovery time	trr		43	86	ns	IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C	2
Body diode reverse recovery charge	Qrr		72	144	nC	IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C	2

CAD (KiCad official)

Symbol: FDMS86105-VB
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: fdms86105-vb-etched.step / fdms86105-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdms86105-vb.step / fdms86105-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 e23083787dcc7704, retrieved 2026-11-04, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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FDMS86105-VB

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3D Model

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