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FDMS7660AS-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDMS7660AS-VB
VBsemi Elec · MOSFETs · DFN-8(5x6)
FDMS7660AS-VB from VBsemi Elec, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (VDS 30 V max, continuous drain current limited by package to 90 A). |
| 2 | S | passive | Source terminal of the N-channel MOSFET (VDS 30 V max, continuous drain current limited by package to 90 A). |
| 3 | S | passive | Source terminal of the N-channel MOSFET (VDS 30 V max, continuous drain current limited by package to 90 A). |
| 4 | G | input | Gate terminal of the N-channel MOSFET with gate-source voltage limit of ±20 V and threshold voltage of 1.5 V min to 2.5 V max at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
FDMS7660AS-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
fdms7660as-vb-etched.step/fdms7660as-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdms7660as-vb.step/fdms7660as-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
8bd9974e9dae39df, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDMS7660AS-VB
**VBsemi Elec** · MOSFETs · DFN-8(5x6)
FDMS7660AS-VB from VBsemi Elec, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (VDS 30 V max, continuous drain current limited by package to 90 A). |
| 2 | S | passive | Source terminal of the N-channel MOSFET (VDS 30 V max, continuous drain current limited by package to 90 A). |
| 3 | S | passive | Source terminal of the N-channel MOSFET (VDS 30 V max, continuous drain current limited by package to 90 A). |
| 4 | G | input | Gate terminal of the N-channel MOSFET with gate-source voltage limit of ±20 V and threshold voltage of 1.5 V min to 2.5 V max at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET with VDS of 30 V max and pulsed drain current of 300 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `FDMS7660AS-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `fdms7660as-vb-etched.step` / `fdms7660as-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdms7660as-vb.step` / `fdms7660as-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/fdms7660as-vb-datasheet.pdf) (7 pp, sha256 `8bd9974e9dae39df`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdms7660as-vb-datasheet.pdf)