component

FDG6320C-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfdg6320c-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 11d ago
viewers fdg6320c-vb: viewers · Ray 11d ago
fdg6320c-vb-etched.glb Publish 0.1.0 · Ray 11d ago
fdg6320c-vb-etched.step fdg6320c-vb: factory component page (tier=lcsc) · Ray 11d ago
fdg6320c-vb-hero.glb fdg6320c-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 11d ago
fdg6320c-vb-hero.overlay.json Publish 0.1.0 · Ray 11d ago
fdg6320c-vb.glb Publish 0.1.0 · Ray 11d ago
fdg6320c-vb.kicad_mod Publish 0.1.0 · Ray 11d ago
fdg6320c-vb.kicad_sym Publish 0.1.0 · Ray 11d ago
fdg6320c-vb.lbr Publish 0.1.0 · Ray 11d ago
fdg6320c-vb.step Publish 0.1.0 · Ray 11d ago
package.json Publish 0.1.0 · Ray 11d ago
page.json Set visibility: public · Ray 11d ago
README.md Publish 0.1.0 · Ray 11d ago

FDG6320C-VB

VBsemi Elec · MOSFETs · SC-70-6

FDG6320C-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated for VDS 20 V, with 3.28 A continuous drain current for 5 s at TA = 25 °C.
2 G1 input Gate of the N-channel MOSFET (Q1), with absolute maximum VGS of ±20 V and a threshold voltage of 0.45 V min to 1 V max at ID = 100 µA.
3 D2 passive Drain of the P-channel MOSFET (Q2), rated for VDS -20 V, with -2.80 A continuous drain current for 5 s at TA = 25 °C.
4 S2 passive Source of the P-channel MOSFET (Q2), rated for VDS -20 V, with continuous source current (diode conduction) of -1.61 A for 5 s.
5 G2 input Gate of the P-channel MOSFET (Q2), with absolute maximum VGS of ±20 V and a threshold voltage of -0.45 V to -1 V at ID = -100 µA.
6 D1 passive Drain of the N-channel MOSFET (Q1), rated for VDS 20 V, with 9.5 A maximum pulsed drain current.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: FDG6320C-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: fdg6320c-vb-etched.step / fdg6320c-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdg6320c-vb.step / fdg6320c-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 a1c7dab77cf100a4, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF