component
FDG6303N
Public Made by Adomby adom
onsemi MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
FDG6303N
onsemi · MOSFETs · SC-70-6
FDG6303N from onsemi, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of FET 1; pins 1 and 4 are interchangeable because the pinout is symmetrical. |
| 2 | G1 | input | Gate of FET 1 with a gate-source Zener for ESD protection (VGSS -0.5 to +8 V, VGS(th) < 1.5 V). |
| 3 | D2 | passive | Drain of FET 2 (VDSS 25 V, 0.5 A continuous, 1.5 A pulsed). |
| 4 | S2 | passive | Source of FET 2; pins 1 and 4 are interchangeable because the pinout is symmetrical. |
| 5 | G2 | input | Gate of FET 2 with a gate-source Zener for ESD protection (VGSS -0.5 to +8 V, VGS(th) < 1.5 V). |
| 6 | D1 | passive | Drain of FET 1 (VDSS 25 V, 0.5 A continuous, 1.5 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-6 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 25 | V | TA = 25°C | 1 | ||
| Gate-Source Voltage | VGSS | -0.5 | 8 | V | TA = 25°C | 1 | |
| Drain/Output Current - Continuous | ID | 0.5 | A | TA = 25°C | 1 | ||
| Drain/Output Current - Pulsed | ID | 1.5 | A | TA = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.3 | W | Note 1 | 1 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Electrostatic Discharge Rating | ESD | 6 | kV | MIL-STD-883D Human Body Model (100 pF / 1500 Ω) | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 415 | °C/W | Note 1, minimum pad on FR-4, still air | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 25 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55°C | 2 | ||
| Gate - Body Leakage Current | IGSS | 100 | nA | VGS = 8 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.65 | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.34 | 0.45 | Ω | VGS = 4.5 V, ID = 0.5 A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.55 | 0.77 | Ω | VGS = 4.5 V, ID = 0.5 A, TJ = 125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.44 | 0.6 | Ω | VGS = 2.7 V, ID = 0.2 A | 2 | |
| On-State Drain Current | ID(ON) | 0.5 | A | VGS = 2.7 V, VDS = 5 V | 2 | ||
| Turn - On Delay Time | tD(on) | 3 | 6 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 | |
| Turn - On Rise Time | tr | 8.5 | 18 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 | |
| Turn - Off Delay Time | tD(off) | 17 | 30 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 | |
| Turn - Off Fall Time | tf | 13 | 25 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 | |
| Total Gate Charge | Qg | 1.64 | 2.3 | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 2 | |
| Maximum Continuous Source Current | IS | 0.25 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0 V, IS = 0.25 A (Note 2) | 2 | |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 26 | mV/°C | ID = 250 µA, Referenced to 25°C | 2 | ||
| Gate Threshold Voltage Temp. Coefficient | ΔVGS(th)/ΔTJ | -2.6 | mV/°C | ID = 250 µA, Referenced to 25°C | 2 | ||
| Forward Transconductance | gFS | 1.45 | S | VDS = 5 V, ID = 0.5 A | 2 | ||
| Input Capacitance | Ciss | 50 | pF | VDS = 10 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 28 | pF | VDS = 10 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 9 | pF | VDS = 10 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Gate-Source Charge | Qgs | 0.38 | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 2 | ||
| Gate-Drain Charge | Qgd | 0.45 | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 2 |
CAD (KiCad official)
- Symbol:
FDG6303N - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
fdg6303n-etched.step/fdg6303n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdg6303n.step/fdg6303n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
c175b7f83f798145, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDG6303N
**onsemi** · MOSFETs · SC-70-6
FDG6303N from onsemi, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of FET 1; pins 1 and 4 are interchangeable because the pinout is symmetrical. |
| 2 | G1 | input | Gate of FET 1 with a gate-source Zener for ESD protection (VGSS -0.5 to +8 V, VGS(th) < 1.5 V). |
| 3 | D2 | passive | Drain of FET 2 (VDSS 25 V, 0.5 A continuous, 1.5 A pulsed). |
| 4 | S2 | passive | Source of FET 2; pins 1 and 4 are interchangeable because the pinout is symmetrical. |
| 5 | G2 | input | Gate of FET 2 with a gate-source Zener for ESD protection (VGSS -0.5 to +8 V, VGS(th) < 1.5 V). |
| 6 | D1 | passive | Drain of FET 1 (VDSS 25 V, 0.5 A continuous, 1.5 A pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-6 |
| Category | Transistors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 25 | V | TA = 25°C | 1 |
| Gate-Source Voltage | VGSS | -0.5 | | 8 | V | TA = 25°C | 1 |
| Drain/Output Current - Continuous | ID | | | 0.5 | A | TA = 25°C | 1 |
| Drain/Output Current - Pulsed | ID | | | 1.5 | A | TA = 25°C | 1 |
| Maximum Power Dissipation | PD | | | 0.3 | W | Note 1 | 1 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Electrostatic Discharge Rating | ESD | | | 6 | kV | MIL-STD-883D Human Body Model (100 pF / 1500 Ω) | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 415 | °C/W | Note 1, minimum pad on FR-4, still air | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 25 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55°C | 2 |
| Gate - Body Leakage Current | IGSS | | | 100 | nA | VGS = 8 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.65 | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.34 | 0.45 | Ω | VGS = 4.5 V, ID = 0.5 A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.55 | 0.77 | Ω | VGS = 4.5 V, ID = 0.5 A, TJ = 125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.44 | 0.6 | Ω | VGS = 2.7 V, ID = 0.2 A | 2 |
| On-State Drain Current | ID(ON) | 0.5 | | | A | VGS = 2.7 V, VDS = 5 V | 2 |
| Turn - On Delay Time | tD(on) | | 3 | 6 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 |
| Turn - On Rise Time | tr | | 8.5 | 18 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 |
| Turn - Off Delay Time | tD(off) | | 17 | 30 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 |
| Turn - Off Fall Time | tf | | 13 | 25 | ns | VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω | 2 |
| Total Gate Charge | Qg | | 1.64 | 2.3 | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 2 |
| Maximum Continuous Source Current | IS | | | 0.25 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS = 0 V, IS = 0.25 A (Note 2) | 2 |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | | 26 | | mV/°C | ID = 250 µA, Referenced to 25°C | 2 |
| Gate Threshold Voltage Temp. Coefficient | ΔVGS(th)/ΔTJ | | -2.6 | | mV/°C | ID = 250 µA, Referenced to 25°C | 2 |
| Forward Transconductance | gFS | | 1.45 | | S | VDS = 5 V, ID = 0.5 A | 2 |
| Input Capacitance | Ciss | | 50 | | pF | VDS = 10 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 28 | | pF | VDS = 10 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 9 | | pF | VDS = 10 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Gate-Source Charge | Qgs | | 0.38 | | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 2 |
| Gate-Drain Charge | Qgd | | 0.45 | | nC | VDS = 5 V, ID = 0.5 A, VGS = 4.5 V | 2 |
## CAD (KiCad official)
- Symbol: `FDG6303N`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files: `fdg6303n-etched.step` / `fdg6303n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdg6303n.step` / `fdg6303n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fdg6303n-d.pdf) (5 pp, sha256 `c175b7f83f798145`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdg6303n-datasheet.pdf)