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FDG6301N-TP

TECH PUBLIC · MOSFETs · SOT-363

FDG6301N-TP from TECH PUBLIC, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (VDS 30V, ID 800mA, VGS ±12V).
2 G1 input Gate of N-channel MOSFET 1 (VGS ±12V max, threshold 0.5V min to 1.2V max).
3 D2 passive Drain of N-channel MOSFET 2 (VDS 30V, ID 800mA continuous, 2100mA pulsed).
4 S2 passive Source of N-channel MOSFET 2 (VDS 30V, ID 800mA).
5 G2 input Gate of N-channel MOSFET 2 (VGS ±12V max, threshold 0.5V min to 1.2V max).
6 D1 passive Drain of N-channel MOSFET 1 (VDS 30V, ID 800mA continuous, 2100mA pulsed).

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-363
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: FDG6301N-TP
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: fdg6301n-tp-etched.step / fdg6301n-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdg6301n-tp.step / fdg6301n-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (4 pp, sha256 2bd27e9b0bc0c1d2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF