component
FDD8896
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD8896
UMW · MOSFETs · TO-252
FDD8896 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-to-source voltage is rated ±20V maximum. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-to-source voltage is rated 30V maximum with continuous drain current of 94A at TC=25°C, VGS=10V. |
| 3 | S | passive | Source of the N-channel MOSFET; package current limitation is 35A per Note 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 30 | V | TC=25°C | 1 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Drain Current Continuous | ID | 94 | A | TC=25°C, VGS=10V (Note 1) | 1 | ||
| Drain Current Continuous | ID | 85 | A | TC=25°C, VGS=4.5V (Note 1) | 1 | ||
| Drain Current Continuous | ID | 17 | A | Tamb=25°C, VGS=10V, with RθJA=52°C/W | 1 | ||
| Single Pulse Avalanche Energy | EAS | 168 | mJ | Note 2 | 1 | ||
| Power Dissipation | PD | 80 | W | TC=25°C | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.88 | °C/W | TO-252 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | °C/W | TO-252 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 52 | °C/W | TO-252, 1in2 copper pad area | 2 | ||
| Drain to Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS=24V, VGS=0V, TJ=150°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250µA | 3 | |
| Drain to Source On Resistance | RDS(ON) | 4.7 | 5.7 | mΩ | ID=35A, VGS=10V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 5.7 | 6.8 | mΩ | ID=35A, VGS=4.5V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 7.5 | 9.2 | mΩ | ID=35A, VGS=10V, TJ=175°C | 3 | |
| Total Gate Charge at 10V | Qg(TOT) | 46 | 60 | nC | VGS=0V to 10V, VDD=15V, ID=35A, Ig=1mA | 3 | |
| Total Gate Charge at 5V | Qg(5) | 24 | 32 | nC | VGS=0V to 5V, VDD=15V, ID=35A, Ig=1mA | 3 | |
| Threshold Gate Charge | Qg(TH) | 2.3 | 3 | nC | VGS=0V to 1V, VDD=15V, ID=35A, Ig=1mA | 3 | |
| Turn-On Time | t(on) | 171 | ns | VDD=15V, ID=35A, VGS=10V, RGS=6.2Ω | 3 | ||
| Turn-Off Time | toff | 143 | ns | VDD=15V, ID=35A, VGS=10V, RGS=6.2Ω | 3 | ||
| Source to Drain Diode Forward Voltage | VSD | 1.25 | V | ISD=35A | 4 | ||
| Source to Drain Diode Forward Voltage | VSD | 1 | V | ISD=15A | 4 | ||
| Reverse Recovery Time | trr | 27 | ns | IF=35A, di/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 12 | nC | IF=35A, di/dt=100A/µs | 4 | ||
| Input Capacitance | Ciss | 2525 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 490 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 300 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | ||
| Gate Resistance | Rg | 2.1 | Ω | VGS=0.5V, f=1MHz | 3 | ||
| Gate to Source Gate Charge | Qgs | 6.9 | nC | VDD=15V, ID=35A, Ig=1mA | 3 | ||
| Gate Charge Threshold to Plateau | Qgs2 | 4.6 | nC | VDD=15V, ID=35A, Ig=1mA | 3 | ||
| Gate to Drain Miller Charge | Qgd | 9.8 | nC | VDD=15V, ID=35A, Ig=1mA | 3 | ||
| Turn-On Delay Time | tD(on) | 9 | ns | VDD=15V, ID=35A, VGS=10V, RGS=6.2Ω | 3 | ||
| Rise Time | tr | 106 | ns | VDD=15V, ID=35A, VGS=10V, RGS=6.2Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 53 | ns | VDD=15V, ID=35A, VGS=10V, RGS=6.2Ω | 3 | ||
| Fall Time | tf | 41 | ns | VDD=15V, ID=35A, VGS=10V, RGS=6.2Ω | 3 |
CAD (KiCad official)
- Symbol:
FDD8896 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd8896-etched.step/fdd8896-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd8896.step/fdd8896.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
b799272e0b515116, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).