component
FDD8874
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDD8874
UMW · MOSFETs · TO-252
FDD8874 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30 V N-channel MOSFET; the gate-to-source voltage is rated ±20 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal of the 30 V N-channel MOSFET; drain-to-source voltage is rated 30 V (VDSS) and continuous drain current is 116 A at TC=25°C, VGS=10V, with the datasheet noting a 35 A package current limitation. |
| 3 | S | passive | SOURCE terminal of the 30 V N-channel MOSFET; the datasheet gives no source-specific limit, and the VDSS and VGS ratings are referenced to this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 30 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 116 | A | TC=25°C, VGS=10V (Note 1) | 1 | ||
| Drain Current Continuous | ID | 103 | A | TC=25°C, VGS=4.5V (Note 1) | 1 | ||
| Drain Current Continuous | ID | 18 | A | Tamb=25°C, VGS=10V, with RθJA=52°C/W | 1 | ||
| Single Pulse Avalanche Energy | EAS | 240 | mJ | Note 2: Starting TJ=25°C, L=0.61mH, IAS=28A, VDD=27V, VGS=10V | 1 | ||
| Power Dissipation | PD | 110 | W | 1 | |||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250µA | 3 | |
| Drain to Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current at TJ=150°C | IDSS | 250 | µA | VDS=24V, VGS=0V, TJ=150°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 4.2 | 5.1 | mΩ | ID=35A, VGS=10V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 5.2 | 6.4 | mΩ | ID=35A, VGS=4.5V | 3 | |
| Thermal Resistance, Junction-to-Case TO-252,TO-251 | RθJC | 1.36 | °C/W | Junction-to-case | 2 | ||
| Thermal Resistance, Junction-to-Ambient TO-252,TO-251 | RθJA | 100 | °C/W | Junction-to-ambient | 2 | ||
| Thermal Resistance, Junction-to-Ambient TO-252, 1in² copper pad area | RθJA | 52 | °C/W | TO-252, 1in² copper pad area | 2 |
CAD (KiCad official)
- Symbol:
FDD8874 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd8874-etched.step/fdd8874-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd8874.step/fdd8874.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
4b3a834b80523127, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDD8874
**UMW** · MOSFETs · TO-252
FDD8874 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30 V N-channel MOSFET; the gate-to-source voltage is rated ±20 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal of the 30 V N-channel MOSFET; drain-to-source voltage is rated 30 V (VDSS) and continuous drain current is 116 A at TC=25°C, VGS=10V, with the datasheet noting a 35 A package current limitation. |
| 3 | S | passive | SOURCE terminal of the 30 V N-channel MOSFET; the datasheet gives no source-specific limit, and the VDSS and VGS ratings are referenced to this terminal. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate to Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current Continuous | ID | | | 116 | A | TC=25°C, VGS=10V (Note 1) | 1 |
| Drain Current Continuous | ID | | | 103 | A | TC=25°C, VGS=4.5V (Note 1) | 1 |
| Drain Current Continuous | ID | | | 18 | A | Tamb=25°C, VGS=10V, with RθJA=52°C/W | 1 |
| Single Pulse Avalanche Energy | EAS | | | 240 | mJ | Note 2: Starting TJ=25°C, L=0.61mH, IAS=28A, VDD=27V, VGS=10V | 1 |
| Power Dissipation | PD | | | 110 | W | | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Drain to Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=24V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current at TJ=150°C | IDSS | | | 250 | µA | VDS=24V, VGS=0V, TJ=150°C | 3 |
| Gate to Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V | 3 |
| Drain to Source On Resistance | RDS(ON) | | 4.2 | 5.1 | mΩ | ID=35A, VGS=10V | 3 |
| Drain to Source On Resistance | RDS(ON) | | 5.2 | 6.4 | mΩ | ID=35A, VGS=4.5V | 3 |
| Thermal Resistance, Junction-to-Case TO-252,TO-251 | RθJC | | 1.36 | | °C/W | Junction-to-case | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252,TO-251 | RθJA | | 100 | | °C/W | Junction-to-ambient | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252, 1in² copper pad area | RθJA | | 52 | | °C/W | TO-252, 1in² copper pad area | 2 |
## CAD (KiCad official)
- Symbol: `FDD8874`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fdd8874-etched.step` / `fdd8874-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd8874.step` / `fdd8874.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876020438347776) (11 pp, sha256 `4b3a834b80523127`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdd8874-datasheet.pdf)