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FDD8870-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD8870-HXY
HXY MOSFET · MOSFETs · TO-252-2L
FDD8870-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement-mode MOSFET, with VGS rated at ±20V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, with VDS rated at 30V per the absolute maximum ratings and a continuous drain current of 120A stated in the general features. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no separate pin-level electrical limit for this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 384 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 196 | mJ | 1 | |||
| Avalanche Current | IAS | 53.8 | A | 1 | |||
| Total Power Dissipation | PD | 62.5 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, IDS=250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VDS=24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=85°C) | IDSS | 30 | mA | VDS=24V, VGS=0V, TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.7 | 2.5 | V | VDS=VGS, IDS=250mA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 3 | 3.8 | mΩ | VGS=10V, IDS=20A | 2 | |
| Drain-Source On-state Resistance (TJ=125°C) | RDS(ON) | 4.4 | mΩ | TJ=125°C | 2 | ||
| Drain-Source On-state Resistance | RDS(ON) | 4 | 5.5 | mΩ | VGS=4.5V, IDS=15A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.1 | V | ISD=20A, VGS=0V | 2 | |
| Forward Transconductance | Gfs | 24.6 | S | VDS=5V, IDS=10A | 2 | ||
| Reverse Recovery Time | trr | 35.6 | ns | IDS=20A, dlSD/dt=100A/ms | 2 | ||
| Charge Time | ta | 19.3 | ns | IDS=20A, dlSD/dt=100A/ms | 2 | ||
| Discharge Time | tb | 16.3 | ns | IDS=20A, dlSD/dt=100A/ms | 2 | ||
| Reverse Recovery Charge | Qrr | 26 | nC | IDS=20A, dlSD/dt=100A/ms | 2 | ||
| Gate Resistance | RG | 1 | 2 | W | VGS=0V, VDS=0V, F=1MHz | 2 | |
| Input Capacitance | Ciss | 2485 | 2971 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | |
| Output Capacitance | Coss | 850 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 85 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 12.4 | 23 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Turn-on Rise Time | tr | 9.5 | 18 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Turn-off Delay Time | td(OFF) | 27.2 | 49 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Turn-off Fall Time | tf | 35.2 | 64 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Total Gate Charge | Qg | 20.6 | 28.8 | nC | VDS=15V, VGS=10V, IDS=20A | 2 | |
| Total Gate Charge | Qg | 9.8 | nC | VDS=15V, VGS=4.5V, IDS=20A | 2 | ||
| Threshold Gate Charge | Qgth | 1.8 | nC | 2 | |||
| Gate-Source Charge | Qgs | 3.8 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.7 | nC | 2 |
CAD (KiCad official)
- Symbol:
FDD8870-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
fdd8870-hxy-etched.step/fdd8870-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd8870-hxy.step/fdd8870-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
13bb53f6e1016156, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).