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FDD8796

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDD8796

UMW · MOSFETs · TO-252

FDD8796 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 25 V N-channel MOSFET, where the absolute maximum gate-to-source voltage is ±20 V.
2 D passive DRAIN terminal, rated for a drain-to-source voltage of 25 V and a continuous drain current of 35 A (die limited) per the absolute maximum ratings.
3 S passive SOURCE terminal, the reference for the gate-to-source voltage and the source of the body diode.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 25 V ID=250µA, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=25°C) IDSS 1 µA VDS=20V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=150°C) IDSS 250 µA TJ=150°C, VDS=20V, VGS=0V 3
Gate to Source Leakage Current IGSS -100 100 nA VGS=±20V 3
Gate to Source Threshold Voltage VGS(th) 1.2 1.8 2.5 V VDS=VGS, ID=250µA 3
Input Capacitance Ciss 1960 2610 pF VDS=13V, VGS=0V, f=1MHz 3
Output Capacitance Coss 455 605 pF VDS=13V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 315 475 pF VDS=13V, VGS=0V, f=1MHz 3
Turn-On Delay Time tD(on) 10 20 ns VDD=13V, ID=35A, VGS=10V, RGEN=20Ω 3
Rise Time tr 24 39 ns VDD=13V, ID=35A, VGS=10V, RGEN=20Ω 3
Turn-Off Delay Time tD(off) 99 158 ns VDD=13V, ID=35A, VGS=10V, RGEN=20Ω 3
Fall Time tf 57 91 ns VDD=13V, ID=35A, VGS=10V, RGEN=20Ω 3
Total Gate Charge (VGS=0 to 10V) Qg 37 52 nC VGS=0V to 10V, VDD=13V, ID=35A 3
Total Gate Charge (VGS=0 to 5V) Qg 19 27 nC VGS=0V to 5V, VDD=13V, ID=35A 3
Drain to Source On Resistance (VGS=10V) RDS(ON) 4.5 5.7 mΩ VGS=10V, ID=35A 3
Drain to Source On Resistance (VGS=4.5V) RDS(ON) 6 8 mΩ VGS=4.5V, ID=35A 3
Source to Drain Diode Forward Voltage (IS=35A) VSD 0.9 1.25 V VGS=0V, IS=35A 3
Source to Drain Diode Forward Voltage (IS=15A) VSD 0.8 1 V VGS=0V, IS=15A 3
Reverse Recovery Time trr 30 45 ns IF=35A, di/dt=100A/μs 4
Reverse Recovery Charge Qrr 23 35 nC IF=35A, di/dt=100A/μs 4
Drain to Source Voltage VDS 25 V 1
Gate to Source Voltage VGS -20 20 V 1
Drain Current Continuous (Package Limited) ID 35 A 1
Drain Current Continuous (Die Limited) ID 98 A 1
Drain Current Pulsed IDM 305 A Note 1: pulse time<300µs, duty cycle=2% 1
Single Pulse Avalanche Energy EAS 91 mJ TJ=25°C start, L=0.3mH, IAS=24.7A, VDD=23V, VGS=10V (Note 2) 1
Power Dissipation PD 88 W 1
Storage Junction Temperature Range TJ, TSTG -55 175 °C 1
Thermal Resistance, Junction-to-Case (TO-252, TO-251) RθJC 1.7 °C/W 2
Thermal Resistance, Junction-to-Ambient (TO-252, TO-251) RθJA 100 °C/W 2
Thermal Resistance, Junction-to-Ambient (TO-252, 1in² copper pad area) RθJA 52 °C/W 1in² copper pad area 2

CAD (KiCad official)

  • Symbol: FDD8796
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fdd8796-etched.step / fdd8796-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdd8796.step / fdd8796.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 0949e3bea93bc043, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF