component
FDD8780
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDD8780
UMW · MOSFETs · TO-252
FDD8780 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 25V N-channel MOSFET; the absolute maximum gate-to-source voltage is ±20V (VGS). |
| 2 | D | passive | DRAIN terminal of the 25V N-channel MOSFET; the absolute maximum drain-to-source voltage is 25V (VDS). |
| 3 | S | passive | SOURCE terminal of the 25V N-channel MOSFET; it is the reference for the gate-to-source rating (VGS ±20V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 25 | V | TC=25°C | 1 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Drain Current -Continuous (Package Limited) | ID | 35 | A | TC=25°C | 1 | ||
| Drain Current -Continuous (Die Limited) | ID | 60 | A | TC=25°C | 1 | ||
| Drain Current -Pulsed | ID | 224 | A | Pulse time<300μs, Duty cycle = 2% | 1 | ||
| Single Pulse Avalanche Energy | EAS | 73 | mJ | Starting TJ=25°C, L=0.3mH, IAS=22A, VDD=23V, VGS=10V | 1 | ||
| Power Dissipation | PD | 50 | W | TC=25°C | 1 | ||
| Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case TO-252,TO-251 | RθJC | 3 | °C/W | TO-252, TO-251 | 2 | ||
| Thermal Resistance, Junction-to-Ambient TO-252,TO-251 | RθJA | 100 | °C/W | TO-252, TO-251 | 2 | ||
| Thermal Resistance, Junction-to-Ambient TO-252, 1in² copper pad area | RθJA | 52 | °C/W | TO-252, 1 in² copper pad area | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 25 | V | ID=250µA, VGS=0V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Drain to Source On Resistance | RDS(ON) | 6.5 | 8.5 | mΩ | VGS=10V, ID=35A | 3 | |
| Drain to Source On Resistance | RDS(ON) | 9.1 | 12 | mΩ | VGS=4.5V, ID=35A | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=150°C) | IDSS | 250 | µA | VDS=20V, VGS=0V, TJ=150°C | 3 | ||
| Input Capacitance | Ciss | 1080 | 1440 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 265 | 355 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 180 | 270 | pF | VDS=13V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 7 | 14 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 | |
| Rise Time | tr | 9 | 18 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 43 | 69 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 | |
| Fall Time | tf | 24 | 38 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 | |
| Total Gate Charge (VGS=0V to 10V) | Qg | 21 | 29 | nC | VGS=0V to 10V, VDD=13V, ID=35A | 3 | |
| Total Gate Charge (VGS=0V to 5V) | Qg | 11.2 | 16 | nC | VGS=0V to 5V, VDD=13V, ID=35A | 3 | |
| Gate to Source Gate Charge | Qgs | 3.5 | nC | VDD=13V, ID=35A, Ig=1mA | 3 | ||
| Gate to Drain Miller Charge | Qgd | 4.7 | nC | VDD=13V, ID=35A, Ig=1mA | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 12 | mV/°C | ID=250µA, referenced to 25°C | 3 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | -6.3 | mV/°C | ID=250µA, referenced to 25°C | 3 | ||
| Source to Drain Diode Forward Voltage (IS=35A) | VSD | 0.92 | 1.25 | V | VGS=0V, IS=35A | 3 | |
| Source to Drain Diode Forward Voltage (IS=15A) | VSD | 0.84 | 1 | V | VGS=0V, IS=15A | 3 | |
| Reverse Recovery Time | trr | 28 | 42 | ns | IF=35A, di/dt=100A/μs | 4 | |
| Reverse Recovery Charge | Qrr | 20 | 30 | nC | IF=35A, di/dt=100A/μs | 4 | |
| Gate Resistance | Rg | 0.9 | Ω | f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
FDD8780 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd8780-etched.step/fdd8780-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd8780.step/fdd8780.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
b3f30c2e3a516777, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDD8780
**UMW** · MOSFETs · TO-252
FDD8780 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 25V N-channel MOSFET; the absolute maximum gate-to-source voltage is ±20V (VGS). |
| 2 | D | passive | DRAIN terminal of the 25V N-channel MOSFET; the absolute maximum drain-to-source voltage is 25V (VDS). |
| 3 | S | passive | SOURCE terminal of the 25V N-channel MOSFET; it is the reference for the gate-to-source rating (VGS ±20V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | | | 25 | V | TC=25°C | 1 |
| Gate to Source Voltage | VGS | -20 | | 20 | V | TC=25°C | 1 |
| Drain Current -Continuous (Package Limited) | ID | | | 35 | A | TC=25°C | 1 |
| Drain Current -Continuous (Die Limited) | ID | | | 60 | A | TC=25°C | 1 |
| Drain Current -Pulsed | ID | | | 224 | A | Pulse time<300μs, Duty cycle = 2% | 1 |
| Single Pulse Avalanche Energy | EAS | | | 73 | mJ | Starting TJ=25°C, L=0.3mH, IAS=22A, VDD=23V, VGS=10V | 1 |
| Power Dissipation | PD | | | 50 | W | TC=25°C | 1 |
| Storage Junction Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Thermal Resistance, Junction-to-Case TO-252,TO-251 | RθJC | | | 3 | °C/W | TO-252, TO-251 | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252,TO-251 | RθJA | | | 100 | °C/W | TO-252, TO-251 | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252, 1in² copper pad area | RθJA | | | 52 | °C/W | TO-252, 1 in² copper pad area | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 25 | | | V | ID=250µA, VGS=0V | 3 |
| Gate to Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Drain to Source On Resistance | RDS(ON) | | 6.5 | 8.5 | mΩ | VGS=10V, ID=35A | 3 |
| Drain to Source On Resistance | RDS(ON) | | 9.1 | 12 | mΩ | VGS=4.5V, ID=35A | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=20V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (TJ=150°C) | IDSS | | | 250 | µA | VDS=20V, VGS=0V, TJ=150°C | 3 |
| Input Capacitance | Ciss | | 1080 | 1440 | pF | VDS=13V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 265 | 355 | pF | VDS=13V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 180 | 270 | pF | VDS=13V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 7 | 14 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 |
| Rise Time | tr | | 9 | 18 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 |
| Turn-Off Delay Time | tD(off) | | 43 | 69 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 |
| Fall Time | tf | | 24 | 38 | ns | VDD=13V, ID=35A, VGS=10V, RGEN=17Ω | 3 |
| Total Gate Charge (VGS=0V to 10V) | Qg | | 21 | 29 | nC | VGS=0V to 10V, VDD=13V, ID=35A | 3 |
| Total Gate Charge (VGS=0V to 5V) | Qg | | 11.2 | 16 | nC | VGS=0V to 5V, VDD=13V, ID=35A | 3 |
| Gate to Source Gate Charge | Qgs | | 3.5 | | nC | VDD=13V, ID=35A, Ig=1mA | 3 |
| Gate to Drain Miller Charge | Qgd | | 4.7 | | nC | VDD=13V, ID=35A, Ig=1mA | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 12 | | mV/°C | ID=250µA, referenced to 25°C | 3 |
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | | -6.3 | | mV/°C | ID=250µA, referenced to 25°C | 3 |
| Source to Drain Diode Forward Voltage (IS=35A) | VSD | | 0.92 | 1.25 | V | VGS=0V, IS=35A | 3 |
| Source to Drain Diode Forward Voltage (IS=15A) | VSD | | 0.84 | 1 | V | VGS=0V, IS=15A | 3 |
| Reverse Recovery Time | trr | | 28 | 42 | ns | IF=35A, di/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr | | 20 | 30 | nC | IF=35A, di/dt=100A/μs | 4 |
| Gate Resistance | Rg | | 0.9 | | Ω | f=1MHz | 3 |
## CAD (KiCad official)
- Symbol: `FDD8780`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fdd8780-etched.step` / `fdd8780-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd8780.step` / `fdd8780.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876027153698816) (10 pp, sha256 `b3f30c2e3a516777`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdd8780-datasheet.pdf)