component
FDD8586
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FDD8586
UMW · MOSFETs · TO-252
FDD8586 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; the absolute maximum gate-to-source voltage VGS is ±20 V. |
| 2 | D | passive | DRAIN terminal; absolute maximum drain-to-source voltage VDS is 20 V and continuous drain current is rated 35 A (package limited) and 93 A (die limited). |
| 3 | S | passive | SOURCE terminal, the reference for the gate-to-source voltage; the datasheet gives no separate pin-specific limits for this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=16V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Drain to Source On Resistance | RDS(ON) | 4 | 5.5 | mΩ | VGS=10V, ID=35A | 3 | |
| Drain to Source On Resistance | RDS(ON) | 5.7 | 8.5 | mΩ | VGS=4.5V, ID=33A | 3 | |
| Drain to Source On Resistance | RDS(ON) | 6.5 | 8.9 | mΩ | VGS=10V, ID=35A, TJ=175°C | 3 | |
| Input Capacitance | Ciss | 1865 | 2480 | pF | VDS=10V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 550 | 730 | pF | VDS=10V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 335 | 445 | pF | VDS=10V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 9 | 18 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 | |
| Rise Time | tr | 11 | 20 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 47 | 75 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 | |
| Fall Time | tf | 25 | 40 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 | |
| Total Gate Charge at 10V | Qg(TOT) | 34 | 48 | nC | VGS=0V to 10V, VDD=10V, ID=35A | 3 | |
| Total Gate Charge at 5V | Qg(5) | 16 | 22 | nC | VGS=0V to 5V, VDD=10V, ID=35A | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.89 | 1.25 | V | VGS=0V, IS=35A | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.82 | 1.2 | V | VGS=0V, IS=15A | 3 | |
| Drain to Source Voltage | VDS | 20 | V | TC=25°C | 1 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Drain Current - Continuous (Package Limited) | ID | 35 | A | TC=25°C | 1 | ||
| Drain Current - Continuous (Die Limited) | ID | 93 | A | TC=25°C | 1 | ||
| Drain Current - Pulsed | IDM | 354 | A | Pulse time<300µs, Duty cycle=2% (Note 1) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 144 | mJ | TJ=25°C, L=0.3mH, IAS=31A, VDD=18V, VGS=10V (Note 2) | 1 | ||
| Power Dissipation | PD | 77 | W | TC=25°C | 1 | ||
| Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | °C | TC=25°C | 1 | |
| Thermal Resistance, Junction-to-Case TO-252 | RθJC | 1.94 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient TO-252 | RθJA | 100 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient TO-252, 1 in² copper pad area | RθJA | 52 | °C/W | 1 in² copper pad area | 2 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | -6.7 | mV/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 175 | S | VDS=10V, ID=35A | 3 | ||
| Gate Resistance | Rg | 1.2 | Ω | Ig=1mA | 3 | ||
| Gate to Source Gate Charge | Qgs | 3.2 | nC | VDD=10V, ID=35A | 3 | ||
| Gate to Drain Miller Charge | Qgd | 5.9 | nC | VDD=10V, ID=35A | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 14.6 | mV/°C | ID=250µA, Referenced to 25°C | 3 |
CAD (KiCad official)
- Symbol:
FDD8586 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fdd8586-etched.step/fdd8586-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd8586.step/fdd8586.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
e96f88cf38ccdac3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FDD8586
**UMW** · MOSFETs · TO-252
FDD8586 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; the absolute maximum gate-to-source voltage VGS is ±20 V. |
| 2 | D | passive | DRAIN terminal; absolute maximum drain-to-source voltage VDS is 20 V and continuous drain current is rated 35 A (package limited) and 93 A (die limited). |
| 3 | S | passive | SOURCE terminal, the reference for the gate-to-source voltage; the datasheet gives no separate pin-specific limits for this terminal. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | ID=250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=16V | 3 |
| Gate to Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Drain to Source On Resistance | RDS(ON) | | 4 | 5.5 | mΩ | VGS=10V, ID=35A | 3 |
| Drain to Source On Resistance | RDS(ON) | | 5.7 | 8.5 | mΩ | VGS=4.5V, ID=33A | 3 |
| Drain to Source On Resistance | RDS(ON) | | 6.5 | 8.9 | mΩ | VGS=10V, ID=35A, TJ=175°C | 3 |
| Input Capacitance | Ciss | | 1865 | 2480 | pF | VDS=10V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 550 | 730 | pF | VDS=10V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 335 | 445 | pF | VDS=10V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 9 | 18 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 |
| Rise Time | tr | | 11 | 20 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 |
| Turn-Off Delay Time | tD(off) | | 47 | 75 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 |
| Fall Time | tf | | 25 | 40 | ns | VDD=10V, ID=35A, VGS=10V, RGEN=10Ω | 3 |
| Total Gate Charge at 10V | Qg(TOT) | | 34 | 48 | nC | VGS=0V to 10V, VDD=10V, ID=35A | 3 |
| Total Gate Charge at 5V | Qg(5) | | 16 | 22 | nC | VGS=0V to 5V, VDD=10V, ID=35A | 3 |
| Source to Drain Diode Forward Voltage | VSD | | 0.89 | 1.25 | V | VGS=0V, IS=35A | 3 |
| Source to Drain Diode Forward Voltage | VSD | | 0.82 | 1.2 | V | VGS=0V, IS=15A | 3 |
| Drain to Source Voltage | VDS | | | 20 | V | TC=25°C | 1 |
| Gate to Source Voltage | VGS | -20 | | 20 | V | TC=25°C | 1 |
| Drain Current - Continuous (Package Limited) | ID | | | 35 | A | TC=25°C | 1 |
| Drain Current - Continuous (Die Limited) | ID | | | 93 | A | TC=25°C | 1 |
| Drain Current - Pulsed | IDM | | | 354 | A | Pulse time<300µs, Duty cycle=2% (Note 1) | 1 |
| Single Pulse Avalanche Energy | EAS | | | 144 | mJ | TJ=25°C, L=0.3mH, IAS=31A, VDD=18V, VGS=10V (Note 2) | 1 |
| Power Dissipation | PD | | | 77 | W | TC=25°C | 1 |
| Storage Junction Temperature Range | TJ, TSTG | -55 | | 175 | °C | TC=25°C | 1 |
| Thermal Resistance, Junction-to-Case TO-252 | RθJC | | 1.94 | | °C/W | | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252 | RθJA | | 100 | | °C/W | | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252, 1 in² copper pad area | RθJA | | 52 | | °C/W | 1 in² copper pad area | 2 |
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | | -6.7 | | mV/°C | ID=250µA, Referenced to 25°C | 3 |
| Forward Transconductance | gFS | | 175 | | S | VDS=10V, ID=35A | 3 |
| Gate Resistance | Rg | | 1.2 | | Ω | Ig=1mA | 3 |
| Gate to Source Gate Charge | Qgs | | 3.2 | | nC | VDD=10V, ID=35A | 3 |
| Gate to Drain Miller Charge | Qgd | | 5.9 | | nC | VDD=10V, ID=35A | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 14.6 | | mV/°C | ID=250µA, Referenced to 25°C | 3 |
## CAD (KiCad official)
- Symbol: `FDD8586`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fdd8586-etched.step` / `fdd8586-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd8586.step` / `fdd8586.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876127745556480) (10 pp, sha256 `e96f88cf38ccdac3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fdd8586-datasheet.pdf)