component

FDD8451-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfdd8451-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
fdd8451-vb / README.md
History Download
Ray Publish 0.1.0 7566402 13d ago

FDD8451-VB

VBsemi Elec · MOSFETs · TO-252

FDD8451-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit ±20 V, threshold 1.5 to 2.5 V at ID = 250 µA.
2 D passive Drain (also the tab); drain-source voltage 40 V, pulsed drain current 200 A.
3 S passive Source; continuous source-drain diode current 90 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 55 A TC = 25 °C (TJ = 175 °C) 1
Continuous Drain Current ID 45 A TC = 70 °C (TJ = 175 °C) 1
Continuous Drain Current ID 15.8 A TA = 25 °C 1
Continuous Drain Current ID 12 A TA = 70 °C 1
Pulsed Drain Current IDM 200 A 1
Single Pulse Avalanche Energy EAS 94.8 mJ 1
Continuous Source-Drain Diode Current IS 90 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 3.13 A TA = 25 °C 1
Maximum Power Dissipation PD 100 W TC = 25 °C 1
Maximum Power Dissipation PD 75 W TC = 70 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C 1
Maximum Power Dissipation PD 2.63 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 32 40 °C/W t ≤ 10 sec 1
Maximum Junction-to-Ambient (steady state, note d) RthJA 90 °C/W Steady state, per note d 1
Maximum Junction-to-Case RthJC 0.5 0.6 °C/W Steady state 1
Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.5 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 90 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.014 Ω VGS = 4.5 V, ID = 37 A 2
Total Gate Charge Qg 85 120 nC VDS = 15 V, VGS = 10 V, ID = 38.8 A 2
Total Gate Charge Qg 42 62 nC VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 10 20 ns VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 10 V, Rg = 1 2
Rise Time tr 11 17 ns VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 35 55 ns VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 10 15 ns VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 10 V, Rg = 1 2
Turn-On Delay Time td(on) 25 43 ns VDD = 15 V, RL = 0.67, ID 22.5 A, VGEN = 4.5 V, Rg = 1 2
Rise Time tr 80 150 ns VDD = 15 V, RL = 0.67, ID 22.5 A, VGEN = 4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 26 42 ns VDD = 15 V, RL = 0.67, ID 22.5 A, VGEN = 4.5 V, Rg = 1 2
Fall Time tf 12 18 ns VDD = 15 V, RL = 0.67, ID 22.5 A, VGEN = 4.5 V, Rg = 1 2
Continuous Source-Drain Diode Current IS 120 A TC = 25 °C 2
Pulse Diode Forward Current ISM 120 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 22 A 2
Body Diode Reverse Recovery Time trr 52 78 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/ΔTJ 35 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/ΔTJ -7.5 mV/°C 2
Forward Transconductance gfs 160 S VDS = 15 V, ID = 38.8 A 2
Output Capacitance Coss 725 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 570 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 17 nC 2
Gate-Drain Charge Qgd 14 nC 2
Body Diode Reverse Recovery Fall Time ta 27 ns 2
Body Diode Reverse Recovery Rise Time tb 25 ns 2

CAD (KiCad official)

  • Symbol: FDD8451-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fdd8451-vb-etched.step / fdd8451-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdd8451-vb.step / fdd8451-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 9ba623cf476b72d5, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF