# FDD8451-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

FDD8451-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V, and the gate threshold is 1.0 V to 2.5 V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 40 V, with continuous drain current 30 A at TC=25℃ (VGS=10V) and pulsed drain current 40 A. |
| 3 | S | passive | Source terminal; body diode maximum continuous forward current is 30 A and pulsed forward current is 40 A, with forward voltage VSD up to 1.2 V at IS=8A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | TC=25℃, VGS @ 10V | 1 |
| Continuous Drain Current | ID |  |  | 15 | A | TC=100℃, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 40 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 17.1 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 10 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 4 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.8 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=40V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 18 | 22 | mΩ | VGS=10V, ID=8A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 25 | 35 | mΩ | VGS=4.5V, ID=5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 30 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 40 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS= 8A | 2 |

## CAD (KiCad official)

- Symbol: `FDD8451-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `fdd8451-hxy-etched.step` / `fdd8451-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdd8451-hxy.step` / `fdd8451-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/fdd8451-hxy-datasheet.pdf) (6 pp, sha256 `0aeb603e7667aecc`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fdd8451-hxy-datasheet.pdf)