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FDD8447L-HXY

HXY MOSFET · MOSFETs · TO-252-2L

FDD8447L-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, rated for VGS of ±20 V and specified for operation with gate voltages as low as 4.5 V, with VGS(th) of 1.2 to 2.0 V.
2 D passive Drain terminal, rated for a drain-source voltage of 40 V and a continuous drain current of 60 A at TC=25℃.
3 S passive Source terminal, the reference for VGS and the source-drain body diode, which has a forward current rating of 68 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 7 8.5 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 15 18 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 15 S VDS=10V,ID=20A 2
Diode Forward Current IS 68 A 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TC=25℃) ID 60 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current (TC=100℃) ID 45 A VGS @ 10V, TC=100℃ 1
Pulsed Drain Current IDM 220 A 1
Single Pulse Avalanche Energy EAS 416.1 mJ Single pulse 1
Avalanche Current IAS 39 A 1
Total Power Dissipation PD 64.6 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W Steady state 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1

CAD (KiCad official)

  • Symbol: FDD8447L-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: fdd8447l-hxy-etched.step / fdd8447l-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdd8447l-hxy.step / fdd8447l-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 ae43cd612627d865, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF