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FDD6N25TM-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDD6N25TM-VB

VBsemi Elec · MOSFETs · TO-252

FDD6N25TM-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; maximum gate-source voltage ±20 V, threshold 2.0 V to 4.0 V at ID = 250 µA, gate leakage ±100 nA max.
2 D passive Drain (also the metal tab); drain-source voltage 250 V max, continuous drain current 4.5 A at TC = 25 °C and pulsed 16 A.
3 S passive Source; continuous body-diode current 3.8 A, RDS(on) 0.64 Ω at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 250 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 250 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (125 °C) IDSS 250 μA VDS = 200 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 1.5 S VDS = 50 V, ID = 2.3 A 2
Total Gate Charge Qg 14 nC ID = 4.4 A, VDS = 200 V, VGS = 10 V 2
Gate-Source Charge Qgs 2.7 nC ID = 4.4 A, VDS = 200 V, VGS = 10 V 2
Gate-Drain Charge Qgd 7.8 nC ID = 4.4 A, VDS = 200 V, VGS = 10 V 2
Continuous Source-Drain Diode Current IS 3.8 A 2
Pulsed Diode Forward Current ISM 15 A 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 3.8 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 200 400 ns TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.93 1.9 μC TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/μs 2
Maximum Junction-to-Ambient (PCB Mount) RthJA 50 °C/W PCB mount 2
Maximum Junction-to-Ambient RthJA 110 °C/W 2
Maximum Junction-to-Case RthJC 3 °C/W 2
Drain-Source Voltage VDS 250 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 4.5 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 3 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 16 A 1
Linear Derating Factor 0.33 W/°C 1
Linear Derating Factor (PCB Mount) 0.02 W/°C PCB mount 1
Single Pulse Avalanche Energy EAS 130 mJ VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 3.8 A 1
Repetitive Avalanche Current IAR 4.5 A 1
Repetitive Avalanche Energy EAR 5.2 mJ 1
Maximum Power Dissipation PD 45 W TC = 25 °C 1
Maximum Power Dissipation (PCB Mount) PD 2.5 W TA = 25 °C, PCB mount 1
Peak Diode Recovery dV/dt dV/dt 4.8 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C for 10 s, 1.6 mm from case 1
VDS Temperature Coefficient ΔVDS/TJ 0.36 V/°C Reference to 25 °C, ID = 1 mA 2
Drain-Source On-State Resistance RDS(on) 0.64 Ω VGS = 10 V, ID = 2.3 A 2
Input Capacitance Ciss 260 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output Capacitance Coss 77 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 15 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 7 ns VDD = 125 V, ID = 4.4 A, RG = 18, RD = 28 2
Rise Time tr 13 ns VDD = 125 V, ID = 4.4 A, RG = 18, RD = 28 2
Turn-Off Delay Time td(off) 20 ns VDD = 125 V, ID = 4.4 A, RG = 18, RD = 28 2
Fall Time tf 12 ns VDD = 125 V, ID = 4.4 A, RG = 18, RD = 28 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2

CAD (KiCad official)

  • Symbol: FDD6N25TM-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fdd6n25tm-vb-etched.step / fdd6n25tm-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdd6n25tm-vb.step / fdd6n25tm-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 798daa6c992c2faa, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF