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FDD6685-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD6685-HXY
HXY MOSFET · MOSFETs · TO-252-2L
FDD6685-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20V absolute maximum, with RDS(ON) specified at VGS=-10V and -4.5V. |
| 2 | D | passive | Drain, connected to the exposed tab (and the trimmed centre stub); VDS rating is -30V with continuous drain current of -50A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -50A max and pulsed source current -150A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -50 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -32 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -9.6 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -7.7 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -150 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A | 1 | ||
| Avalanche Current | IAS | -50 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 45 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | mΩ | VGS=-10V , ID=-30A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 32 | mΩ | VGS=-4.5V , ID=-15A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±25V , VDS=0V | 2 | |
| Continuous Source Current | IS | -50 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -150 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△T | -0.0232 | V/℃ | Reference to 25℃ , ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.6 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 30 | S | VDS=-5V , ID=-30A | 2 | ||
| Gate Resistance | Rg | 9 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 22 | nC | VDS=-15V , VGS=-4.5V , ID=-15A | 2 | ||
| Gate-Source Charge | Qgs | 8.7 | nC | VDS=-15V , VGS=-4.5V , ID=-15A | 2 | ||
| Gate-Drain Charge | Qgd | 7.2 | nC | VDS=-15V , VGS=-4.5V , ID=-15A | 2 | ||
| Turn-On Delay Time | Td(on) | 8 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-15A | 2 | ||
| Rise Time | Tr | 73.7 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 61.8 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-15A | 2 | ||
| Fall Time | Tf | 24.4 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-15A | 2 | ||
| Input Capacitance | Ciss | 2215 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 310 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 237 | pF | VDS=-15V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 19 | nS | IF=-15A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 9 | nC | IF=-15A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
FDD6685-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
fdd6685-hxy-etched.step/fdd6685-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd6685-hxy.step/fdd6685-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
4798c7a5c5675dc1, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).