FDD6680AS

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  "slug": "fdd6680as",
  "title": "FDD6680AS",
  "brief": "UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "FDD6680AS",
    "manufacturer": "UMW",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "digikey": "4518-FDD6680ASTR-ND",
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "GATE terminal of the 30V N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGSS)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "DRAIN terminal; the datasheet names the solder mounting surface of the drain pins as the thermal reference for RθJC (Note 1, page 4)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
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      }
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        "total": 3,
        "described": 3,
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  "metadata": {
    "specs": {
      "Manufacturer": "UMW",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
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          "name": "Drain-Source Voltage",
          "symbol": "VDSS",
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          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "",
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        {
          "name": "Gate-Source Voltage",
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          "unit": "V",
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          "typ": null,
          "max": 20,
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        {
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          "typ": null,
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        {
          "name": "Power Dissipation for Single Operation",
          "symbol": "PD",
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          "unit": "W",
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        {
          "name": "Power Dissipation for Single Operation",
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        {
          "name": "Power Dissipation for Single Operation",
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          "typ": null,
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        {
          "name": "Operating and Storage Junction Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
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          "min": 30,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=1mA",
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        },
        {
          "name": "Gate–Body Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
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          "typ": null,
          "max": 3,
          "conditions": "VDS=VGS, ID=1mA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static Drain–Source On–Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 8.6,
          "max": 10.5,
          "conditions": "VGS=10V, ID=12.5A",
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        },
        {
          "name": "Static Drain–Source On–Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 10.3,
          "max": 13,
          "conditions": "VGS=4.5V, ID=10A",
          "source_page": 3,
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        },
        {
          "name": "On-State Drain Current",
          "symbol": "ID(ON)",
          "kind": "electrical",
          "unit": "A",
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          "typ": null,
          "max": null,
          "conditions": "VGS=10V, VDS=5V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Maximum Continuous Drain–Source Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4.4,
          "conditions": "",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Avalanche Energy",
          "symbol": "WDSS",
          "kind": "electrical",
          "unit": "mJ",
          "min": null,
          "typ": 205,
          "max": null,
          "conditions": "Single Pulse, VDD=15V, ID=13.5A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Breakdown Voltage Temperature Coefficient",
          "symbol": "ΔBVDSS/ΔTJ",
          "kind": "temperature_coefficient",
          "unit": "mV/°C",
          "min": null,
          "typ": 29,
          "max": null,
          "conditions": "ID=1mA, Referenced to 25°C",
          "source_page": 3,
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        },
        {
          "name": "Gate Threshold Voltage Temperature Coefficient",
          "symbol": "ΔVGS(th)/ΔTJ",
          "kind": "temperature_coefficient",
          "unit": "mV/°C",
          "min": null,
          "typ": -3,
          "max": null,
          "conditions": "ID=1mA, Referenced to 25°C",
          "source_page": 3,
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        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
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          "unit": "S",
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          "typ": 45,
          "max": null,
          "conditions": "VDS=15V, ID=12.5A",
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          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case",
          "symbol": "RθJC",
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          "unit": "°C/W",
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          "typ": 2.1,
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          "conditions": "Note 1",
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        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 40,
          "max": null,
          "conditions": "Note 1a, 1 in² pad of 2oz copper",
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        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 96,
          "max": null,
          "conditions": "Note 1b, minimum pad",
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